Observation of the Long Afterglow in AlN Helices

Jin, Lei; Zhang, Huayu; Pan, Ruiqun; Xu, Pingping; Han, Jiecai; Zhang, Xinghong; Yuan, Quan; Zhang, Zhihua; Wang, Xianjie; Wang, Yi; Song, Bo

doi:10.1021/acs.nanolett.5b02300

Cited by 35 publications

(23 citation statements)

References 42 publications

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“…Instead we believe that the component peak at 430 nm is similar to the emission observed by Cox et al 26 and Jin et al in AlN nanostructures excited with slightly higher energy than we used, 325 nm. 21 This peak has been previously attributed to a deep level aluminum interstitial (Al i ).…”

Section: -5mentioning

confidence: 90%

“…They attribute the luminescence to transitions between aluminum vacancies (V Al ) acting as accepters to the valence band. Jin et al 21 also observe a PL peak at ∼600 nm, and using first principles calculations and experiments they attribute the emission to a defect complex consisting of nitrogen vacancy paired with an Al interstitial (V N -Al i ). We believe that the 610 nm peak we observe is due to this same intrinsic defect complex.…”

Section: -5mentioning

confidence: 99%

“…We believe that the higher temperature causes better incorporation of the Ce ions in the ceramics. Recently, emission in the 610 nm region has been reported in nominally undoped AlN whiskers 20 and nanostructures, 21 and attributed to intrinsic AlN defects. Although these earlier reports used higher energy (325 nm) excitation, it is likely that the emission peaks we observe at 610 nm using 465 nm excitation is due to similar defects as will be discussed below.…”

Section: -5mentioning

confidence: 99%

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Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting

et al. 2016

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We introduce high thermal conductivity aluminum nitride (AlN) as a transparent ceramic host for Ce3+, a well-known active ion dopant. We show that the Ce:AlN ceramics have overlapping photoluminescent (PL) emission peaks that cover almost the entire visible range resulting in a white appearance under 375 nm excitation without the need for color mixing. The PL is due to a combination of intrinsic AlN defect complexes and Ce3+ electronic transitions. Importantly, the peak intensities can be tuned by varying the Ce concentration and processing parameters, causing different shades of white light without the need for multiple phosphors or light sources. The Commission Internationale de l’Eclairage coordinates calculated from the measured spectra confirm white light emission. In addition, we demonstrate the viability of laser driven white light emission by coupling the Ce:AlN to a readily available frequency tripled Nd-YAG laser emitting at 355 nm. The high thermal conductivity of these ceramic down-converters holds significant promise for producing higher power white light sources than those available today.

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Section: -5mentioning

confidence: 90%

Section: -5mentioning

confidence: 99%

Section: -5mentioning

confidence: 99%

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Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting

et al. 2016

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“…Physical vapor transport (PVT) method, hydride vapor phase epitaxy (HVPE) method, and thermal nitridation of Al 2 O 3 have been developed for AlN production. In the case of PVT method, growth of helical crystal has also been developed . However, fabricating lager diameter AlN bulk crystal at a reasonable cost has yet to be achieved.…”

Section: Introductionmentioning

confidence: 99%

“…In the case of PVT method, growth of helical crystal has also been developed. 12,13 However, fabricating lager diameter AlN bulk crystal at a reasonable cost has yet to be achieved.…”

Section: Introductionmentioning

confidence: 99%

In‐situ observation of AlN formation from Ni‐Al solution using an electromagnetic levitation technique

et al. 2020

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Aluminum nitride is a promising substrate material for AlGaN-based UV-LED. In order to develop a robust growth processing route for AlN single crystals, fundamental studies of solution growth experiments using Ni-Al alloy melts as a new solution system were performed. Al can be stably kept in solution the Ni-Al liquid even at high temperature; in addition, the driving force of the AlN formation reaction from solution can be controlled by solution composition and temperature. To investigate AlN crystal growth behavior we developed an in situ observation system using an electromagnetic levitation technique. AlN formation behavior, including nucleation and growth, was quantitatively analyzed by an image processing pipeline. The nucleation rate of AlN decreased with increasing growth temperature and decreasing aluminum composition. In addition, hexagonal c-axis oriented AlN crystal successfully grew on the levitated Ni-40 mol%Al droplet reacted at low driving force (1960 K), on the other hand, AlN crystal with dendritic morphology appeared on the sample with higher driving force (Ni-50 mol%Al, 1960 K). Thus, the nucleation rate and crystal morphology were dominated by the driving force of the AlN formation reaction. K E Y W O R D S aluminum nitride, crystal growth, nucleation, thermodynamicsThis is an open access article under the terms of the Creat ive Commo ns Attri bution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. How to cite this article: Adachi M, Hamaya S, Yamagata Y, et al. In-situ observation of AlN formation from Ni-Al solution using an electromagnetic levitation technique. J Am Ceram Soc.

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Free‐Standing 2D Hexagonal Aluminum Nitride Dielectric Crystals for High‐Performance Organic Field‐Effect Transistors

et al. 2018

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The existence of defects and traps in a transistor plays an adverse role on efficient charge transport. In response to this challenge, extensive research has been conducted on semiconductor crystalline materials in the past decades. However, the development of dielectric crystals for transistors is still in its infancy due to the lack of appropriate dielectric crystalline materials and, most importantly, the crystal morphology required by the gate dielectric layer, which is also crucial for the construction of high-performance transistor as it can greatly improve the interfacial quality of carrier transport path. Here, a new type of dielectric crystal of hexagonal aluminum nitride (AlN) with the desired 2D morphology of combing thin thickness with large lateral dimension is synthesized. Such a suitable morphology in combination with the outstanding dielectric properties of AlN makes it promising as a gate dielectric for transistors. Furthermore, ultrathin 2,6-diphenylanthracene molecular crystals with only a few molecular layers can be prepared on AlN crystal via van der Waals epitaxy. As a result, this all-crystalline system incorporating dielectric and semiconductor crystals greatly enhances the overall performance of a transistor, indicating the importance of minimizing defects and preparing high-quality semiconductor/dielectric interface in a transistor configuration.

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Observation of the Long Afterglow in AlN Helices

Cited by 35 publications

References 42 publications

Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting

Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting

In‐situ observation of AlN formation from Ni‐Al solution using an electromagnetic levitation technique

Free‐Standing 2D Hexagonal Aluminum Nitride Dielectric Crystals for High‐Performance Organic Field‐Effect Transistors

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