Observation of the resonance tunneling in field emission structures

Литовченко, В.Г.; Еvtukh, А.А.; Litvin, Yu. M.; Goncharuk, N. M.; Chayka, V.E.

doi:10.1116/1.590612

Cited by 22 publications

(6 citation statements)

References 10 publications

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“…However, when the voltage is higher than 2.2 V, i.e., about 2.0ϫ 10 6 V / cm, the FE current keeps at an almost invariable value and there appear the resonant peaks, which is conceptually close to resonantly-enhanced field emission. Similar theoretical results were also reported for an emitter accumulation layer, [18][19][20][21] and experimental results were observed for FE from a cathode with DLC coating, 21,22 where the emergence of the resonant current peaks might be due to the subband occurring in the QW.…”

Section: Structure Effect For the Controllable Field Emissionsupporting

confidence: 83%

Structural enhancement mechanism of field emission from multilayer semiconductor films

et al. 2005

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A self-consistent quantum model is developed to investigate the structural enhancement mechanism of field emission ͑FE͒ from multilayer semiconductor films. Compared with previous two-step FE mechanism, our self-consistent model is straightforward to understanding the whole tunneling process of the FE from multilayer semiconductor films. Calculated results show that FE characteristics can be remarkably improved only by structure modulation. The distinct structure effect of the FE characteristics mainly result from two reasons: one is the energy level shift and the other is effective surface barrier reduction due to accumulation of electrons in the occupied states. The present study offered new insights in structural effects for field emitters, which opened the possibility of carrying field emission research and application from an alternative approach.

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Section: Structure Effect For the Controllable Field Emissionsupporting

confidence: 83%

Structural enhancement mechanism of field emission from multilayer semiconductor films

et al. 2005

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“…The emitted current from wide band gap semiconductors can be strongly influenced or dictated by transport through the Schottky barrier characterizing the back contact, and transport through the wide band gap material has numerous complications of its own [61,[68][69][70][71]. Surface layers or adatoms [72], and for analogous reasons, layered semiconductor structures which can give rise to a resonant tunneling effect [73], complicate matters by introducing modifications to either the potential barrier or the supply function. Band bending at the surface is complicated by the fact that a triangular well-like potential has discrete energy states (given approximately by zeros of the Airy function) rather than a continuum of states [74].…”

Section: Emission From Semiconductorsmentioning

confidence: 99%

Theory of Field Emission

Jensen

2001

Vacuum Microelectronics

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“…Очікується, що наяв-ність нанокластерів на кремнієвих вістрях буде сприяти електронній польовій емісії та приведе до реалізації резонансного тунелювання [3].…”

Section: експериментальна частинаunclassified

Formation of Silicim Micro- And Nanostructures for Electron Field Emission

Steblova¹,

Bratus²,

Педченко³

et al. 2012

SEMST

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Анотація. В даній роботі були сформовані резонансно-тунельні структури на основі нано-композитних плівок SiO 2 (Si), що містять Si нанокристали в діелектричній матриці методами хімічного осадження при низькому тиску (LP CVD -low pressure chemical vapor deposition) та методу іонно-плазмового розпилення (IPS). Кремнієві нанорозмірні структури формувались як на плоскій поверхні, так і на кремнієвих вістрях. Формування кремнієвих наноострівців зі зба-гачених кремнієм плівок SiO x відбувалось в процесі відпалу при температурах 1000 0 С, 1050 0 С та 1100 0 С. Проведено аналіз структури поверхні вихідної та відпаленої плівок SiOx, отриманих методом IPS, за допомогою атомно-силової мікроскопії (АСМ). Досліджувався вплив відпалу на розміри нанокристалів для зразків з різною концентрацією надлишкового кремнію у вихідній плівці. Виявлений ефект немонотонної електронно-польової емісії (ЕПЕ) з поверхні плівок SiO 2 (Si) сформованої методом LP CVD.Ключові слова: хімічне осадження при низькому тиску, іонно-плазмове розпилення, плівки SiO x , нанокристали кремнію, резонансно-тунельні структури, польова емісія. Abstract. In this work resonance-tunnel structure based on nano-composite films SiO 2 (Si),which contain Si nanocrystals in a dielectric matrix have been formed by method of chemical deposition at low pressure (LP CVD -low pressure chemical vapor deposition) and ion plasma sputtering (IPS). Silicon nanosize structures were formed as on a flat surface and on the silicon tip. The formation of silicon nanoislands from silicon enriched SiO x films were performed during annealing at temperatures of 1000 0 C, 1100°C and 1050 0 C. AFM topography image of the original SiOx and annealing films, FORMATION OF SILICIM MICRO-AND NANOSTRUCTURES FOR ELECTRON

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Observation of the resonance tunneling in field emission structures

Abstract: Articles you may be interested inEfficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure J. Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining

Cited by 22 publications

References 10 publications

Structural enhancement mechanism of field emission from multilayer semiconductor films

Structural enhancement mechanism of field emission from multilayer semiconductor films

Theory of Field Emission

Formation of Silicim Micro- And Nanostructures for Electron Field Emission

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