Observation of turnover of spontaneous polarization in ferroelectric layer of pentacene/poly-(vinylidene-trifluoroethylene) double-layer capacitor under photo illumination by optical second-harmonic generation measurement

Shi, Zhemin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

doi:10.1063/1.4947584

Cited by 3 publications

(2 citation statements)

References 30 publications

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“…Applying a positive voltage maintains the vibronic peaks of pentacene without a spectral shift, Figure 10. This led us to other conclusions, whether optical dielectric constant is effected by the charge accumulation at the interfaces of the films or applying voltage would have an effect on the molecular polarization [39,40].…”

Section: Incident Photon To Current Efficiency (Ipce)mentioning

confidence: 99%

Enhanced Photodiodes with Coupled Organic-Inorganic Nanostructures Utilizing double Heterostructure ligands versus Single Ligand

Abdalbaqi

2023

Preprint

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The influence of the ligands in coupled organic-inorganic nanostructures (COINs) on the performance of optoelectronic devices is investigated. We fabricated photodiodes based on pentacene and PbS nanocrystals coupled to organic ligands like 1,2-ethanedithiol (EDT) and tetrabutylammonium iodide (TBAI) and a combination of both, EDT and TBAI, as a heterostructure. These ligands were first separately used to fabricate single ligand-type of organic-inorganic devices and later compared with a heterostructure of PbS-EDT and PbS-TBAI. To tune the optical energy gap of COINs to align with the triplet level of pentacene, it was necessary to choose a suitable particle size. For this purpose, ultraviolet photo-emission spectroscopy (UPS) was used to determine the energy of the highest occupied molecular orbital (HOMO) and the work function of COINs, while the energy of the lowest unoccupied molecular orbital (LUMO) of COINs was estimated subsequently by adding the exciton binding energy and the optical band gap to the measured HOMO energy. Devices with heterostructure COINs achieve a higher short circuit current than COINs with a single type of the ligands. Finally, even if the requirements of proper energy level alignment are satisfied, the photodiodes' performance was affected by the morphology of COINs. This finding has been demonstrated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Incident photon to current efficiency (IPCE) shows a shift for the excitonic absorption peaks in the visible range at opposite applied voltages. The IPCE signal for the double heterostructure device is higher than the single type device.

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Section: Incident Photon To Current Efficiency (Ipce)mentioning

confidence: 99%

Enhanced Photodiodes with Coupled Organic-Inorganic Nanostructures Utilizing double Heterostructure ligands versus Single Ligand

Abdalbaqi

2023

Preprint

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“…In our previous paper, we studied the displacement current-voltage characteristics of metal/ ferroelectric/ organic semiconductor/ metal (MFS) diodes by using the EFISHG measurement [26]. Results showed that the EFISHG measurement coupled with displacement current measurement (DCM) is useful for analyzing the relationship between the polarization reversal process in the ferroelectric layer and associated carrier behaviors in the semiconductor layer, in terms of the three-peak generation in the DCM [27][28][29]. We also used the charge modulation spectroscopy (CMS) to study the relationship between the related energetics of carriers in semiconductor layer and polarization reversal in MFS diodes [26].…”

Section: Introductionmentioning

confidence: 99%

Direct visualization of polarization reversal of organic ferroelectric memory transistor by using charge modulated reflectance imaging

Otsuka

Taguchi

Manaka

et al. 2017

Journal of Applied Physics

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By using charge modulated reflectance (CMR) imaging technique, charge distribution in the pentacene organic field-effect transistor (OFET) with a ferroelectric gate insulator [P(VDF-TrFE)] was investigated in terms of polarization reversal of the P(VDF-TrFE) layer. We studied the polarization reversal process and carrier spreading process in the OFET channel. I-V measurement showed a hysteresis behavior caused from the spontaneous polarization of P(VDF-TrFE), but the hysteresis I-V curve changes depending on the applied drain bias, possibly due to the gradual shift of polarization reversal position in the OFET channel. CMR imaging visualized the gradual shift of polarization reversal position, and showed that the electrostatic field formed by the polarization of P(VDF-TrFE) contributes to hole and electron injection into pentacene layer and the carrier distribution is significantly dependent on the direction of the polarization. Polarization reversal position in the channel region is governed by the electrostatic potential and it happens where the potential reaches the coercive voltage of P(VDF-TrFE). Transmission line model developed on the basis of the Maxwell-Wagner effect element analysis well accounts for this polarization reversal process in the OFET channel.

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Study of carrier energetics in ITO/P(VDF-TrFE)/pentacene/Au diode by using electric-field-induced optical second harmonic generation measurement and charge modulation spectroscopy

Otsuka

Taguchi

Manaka

et al. 2017

Journal of Applied Physics

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By using electric-field-induced optical second harmonic generation (EFISHG) measurement and charge modulation spectroscopy (CMS), we studied carrier behavior and polarization reversal in ITO/ poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE))/pentacene/Au diodes with ferroelectric P(VDF-TrFE) layer in terms of carrier energetics. The current-voltage (I-V) characteristics of the diodes showed three-step polarization reversal in dark. However, the I-V was totally different under illumination and exhibited two-step behavior. EFISHG probed the internal electric field in the pentacene layer and accounted for the polarization reversal change due to charge accumulation at the pentacene/P(VDF-TrFE) interface. CMS probed the related carrier energetics, and indicated that exciton dissociation in pentacene molecular states governed carrier accumulation at the pentacene/ferroelectric interface, leading to different polarization reversal processes in dark and under light illumination. Combining EFISHG measurement and CMS provides us a way to study carrier energetics that govern polarization reversal in ferroelectric P(VDF-TrFE)/pentacene diode.

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Observation of turnover of spontaneous polarization in ferroelectric layer of pentacene/poly-(vinylidene-trifluoroethylene) double-layer capacitor under photo illumination by optical second-harmonic generation measurement

Cited by 3 publications

References 30 publications

Enhanced Photodiodes with Coupled Organic-Inorganic Nanostructures Utilizing double Heterostructure ligands versus Single Ligand

Enhanced Photodiodes with Coupled Organic-Inorganic Nanostructures Utilizing double Heterostructure ligands versus Single Ligand

Direct visualization of polarization reversal of organic ferroelectric memory transistor by using charge modulated reflectance imaging

Study of carrier energetics in ITO/P(VDF-TrFE)/pentacene/Au diode by using electric-field-induced optical second harmonic generation measurement and charge modulation spectroscopy

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