Y 2/3 Cu 3 Ti 4 O 12 ceramic is a novel semiconductor with potential applications in electronic devices. However, its resistance drift and surface structure defects limit the application for negative temperature coefficient thermistor devices. A comparative study of solid-phase and a Pechini processing of Y 2/3 Cu 3 Ti 4 O 12 is presented in this paper, in the particular comparative study of stability. The Pechini method is found to be effective in lowering sintering temperature and improving thermal stability (ΔR/R 0 < 0.3%) in comparison with solid-phase method. The origin of the stability deterioration is related to the oxidation state of Cu ions and the migration of sublattice. The Pechini method overcomes stoichiometric ratio deviations and cation vacancy diffusion, thus reducing metal ion segregation in a continuous high-temperature environment and thereby showing unique insensitivity to oxygen. The important role of the Pechini method in improving thermal stability is revealed, which is expected to be used in the preparation of high stability electron devices.