2020
DOI: 10.1111/jace.17209
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Observed volatilization behavior of silicon carbide in flowing hydrogen above 2000 K

Abstract: Nuclear thermal propulsion (NTP) is an in-space propulsion method which directly transfers the heat from fission to a working fluid (ie propellant), which is heated to extremely high temperatures (2000-3000 K) and expanded through a nozzle to provide thrust. Through the use of a hydrogen (H 2) propellant, NTP is capable of high specific impulse (800-1100 seconds) and thrust (15-100 kN). This combination of high thrust and specific impulse is highly desirable for crewed interplanetary missions, to destinations … Show more

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Cited by 2 publications
(1 citation statement)
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“…Wang et al 19 prepared a HfB 2 -SiC coating on C/C composites, and reported impressive improvement in ablation resistance for 60 s. But when the ablation temperature was higher than 1700 • C, the active oxidation of SiC and the decreasing of SiO 2 viscosity, degraded the ablation performance of the HfB 2 -SiC coating. [20][21][22][23] To reduce the recession of coating caused by SiC active oxidation, one possible solution is to modify the HfB 2 -SiC coating with other silicides. Among the possible silicide additives, TaSi 2 seems to be a suitable choice owing to its high melting point (∼2040 • C) and a higher melting point of Ta 2 O 5 (∼1875 • C) than that of SiO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…Wang et al 19 prepared a HfB 2 -SiC coating on C/C composites, and reported impressive improvement in ablation resistance for 60 s. But when the ablation temperature was higher than 1700 • C, the active oxidation of SiC and the decreasing of SiO 2 viscosity, degraded the ablation performance of the HfB 2 -SiC coating. [20][21][22][23] To reduce the recession of coating caused by SiC active oxidation, one possible solution is to modify the HfB 2 -SiC coating with other silicides. Among the possible silicide additives, TaSi 2 seems to be a suitable choice owing to its high melting point (∼2040 • C) and a higher melting point of Ta 2 O 5 (∼1875 • C) than that of SiO 2 .…”
Section: Introductionmentioning
confidence: 99%