2017
DOI: 10.1098/rsos.170273
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Occurrence of spintronics behaviour (half-metallicity, spin gapless semiconductor and bipolar magnetic semiconductor) depending on the location of oxygen vacancies in BiFe 0.83 Ni 0.17 O 3

Abstract: The current communication signifies the effect of oxygen vacancies (OVs) both qualitatively and quantitatively in multiferroic BiFe0.83Ni0.17O3 by an in-depth atomic-level investigation of its electronic structure and magnetization properties, and these materials have a variety of applications in spintronics, optoelectronics, sensors and solar energy devices. Depending on the precise location of OVs, all the three types of spintronic material namely half-metallic, spin gapless semiconductor and bipolar magneti… Show more

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Cited by 10 publications
(13 citation statements)
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“…The OVs are created in a hexagonal cell of BiFe 0.83 Ni 0.17 O 3 consisting of 30 atoms (six Bi atoms, five Fe atoms, one Ni atom and eighteen O atoms) according to our previous calculations [16]. This cell has six formula units of BFO.…”
Section: Computational Methodologymentioning
confidence: 99%
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“…The OVs are created in a hexagonal cell of BiFe 0.83 Ni 0.17 O 3 consisting of 30 atoms (six Bi atoms, five Fe atoms, one Ni atom and eighteen O atoms) according to our previous calculations [16]. This cell has six formula units of BFO.…”
Section: Computational Methodologymentioning
confidence: 99%
“…It is well known that OVs which occur in the synthesized samples of BFO have a strong impact on altering the electronic, magnetic, optical, structural and electrical properties of BFO. In our previous investigation, we have addressed the impact of OVs in BiFe 0.83 Ni 0.17 O 3 on its electronic structure and magnetic properties [16]. In this work [16], we have investigated the effects of OVs created qualitatively and quantitatively nearer and farther to the Ni ion of this material by means of first principles DFT calculations and we have established the existence of all types of spintronic behaviors in this material, which includes spin gapless semiconductor (SGS), bipolar magnetic semiconductor (BMS) and half-metallic (HM) depending upon the precise locations of OVs.…”
Section: Introductionmentioning
confidence: 99%
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“…Mukherjee et al discussed the role of Ni and Co doping in BFO but this review article just discussed the structural and dielectric properties without focussing on magnetic properties [30]. Recently few reports are devoted to identifying the spintronic behaviors in B site Ni-doped BFO on the basis of density functional theory (DFT + U) studies with the induced half-metallic nature [31][32][33]. But these studies are lacking in experimental analysis.…”
Section: Introductionmentioning
confidence: 99%