Octadecyltrichlorosilane (OTS): a resist for OMCVD gold nanoparticle growth

Abstract

One application of octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) is its use as thin film resists. In this work, we demonstrated that OTS SAMs can be reliable resists for organo-metallic chemical vapor deposition (OMCVD) grown gold nanoparticles (Au NPs). In optical sensing applications based on Au NPs, one candidate system consists of patterned OTS SAMs and precisely grown OMCVD Au NPs for achieving a high sensitivity. As an initial step, the OTS SAMs need to perfectly resist the OMCVD Au NP growth. Hence the optimized formation of the OTS SAMs affected by different assembly times and baking temperatures was studied by contact angle, ellipsometry, XPS, SEM, and atomic force microscopy (AFM). To demonstrate the ability of the OTS SAMs to resist OMCVD Au NP growth, the OMCVD process was carried out on two sets of samples: OTS SAMs fabricated under optimized conditions on one set and the other set without OTS SAMs. High-resolution XPS, RBS, SEM, and ultraviolet-visible (UV-Vis) spectroscopy were applied to study the growth of Au NPs on the samples with and without OTS SAM resists.

Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates

“…For the SAM treatment, the fabricated MoS 2 FETs and the substrates with MoS 2 flakes were dipped in toluene solution containing ODTS (3 × 10 −3 m ) in ambient air, at room temperature. Dipping time was varied from 4, 8, and 12 h. The contact angle and ellipsometry measurement were conducted to evaluate the quality of SAM, and a similar water contact angle (103°) of ODTS‐treated SiO 2 (Figure S10a, Supporting Information) and a thickness of ODTS (3.2–5.9 nm depending on SAM‐treatment time) (Figure S10b, Supporting Information) were observed as compared to the previously reported value, which implies that our SAM‐treatment condition is quite optimized …”

Air‐ and Active Hydrogen‐Induced Electron Trapping and Operational Instability in n‐Type Polymer Field‐Effect Transistors

“…The single C(1s) peak of LDOTS and HDOTS at 284.8 eV is consistent with an alkane environment in the OTS molecule . A weak C(1s) peak is also detected on a O 2 ‐plasma SiO 2 substrate because compounds containing CO and CO moieties are adsorbed onto the surface exposed to atmosphere . The C(1s)/Si(2p) peak ratio was used as a measure of the relative chain packing density of the OTS monolayers.…”

Surface‐immobilized Gold Nanoparticles by Organometallic CVD on Amine‐terminated Glass Surfaces

“…c), which forms a non‐growth surface. This SAM avoids gold deposition on the inner walls of the reactor . This procedure increases the efficiency of the AuNP growth process by avoiding unnecessary precursor consumption.…”

“…CVD is a surface chemistry selective process, meaning the substrate surface can be functionalized, creating areas with, and without, film growth . The desired surface functionalization to create nucleation sites can be achieved, for example, by a self‐assembly process; dithiols are used on metallic surfaces and silanes on oxidized surfaces to form self‐assembled monolayers (SAMs) .…”