OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup

Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, G.

doi:10.1109/ted.2021.3083211

Cited by 5 publications

(7 citation statements)

References 24 publications

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“…REXT is needed to counteract the effect of parasitic capacitance during OCVD measurements, as outlined by Green [13]. A thorough explanation of the OCVD measurement can be found in [14]. During measurements, the TO-8 case is maintained within a Climate Chamber at a specific temperature for approximately 20 minutes.…”

Section: B Measurements On Packaged Devicesmentioning

confidence: 99%

“…The high injection regime can be validated by conducting OCVD measurements at increasing bias levels until the saturation of τHL is observed [28] conducting measurements with various REXT values connected in parallel to the diode under test helps identify the optimal REXT value for compensating the experimental setup's impact on the measured lifetime, as detailed in [14]. τ HL is computed by the formula [30]:…”

Section: Ocvd Measurements: 𝝉 𝑯𝑳 Extractionmentioning

confidence: 99%

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Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Sozzi,

Sapienza,

Chiorboli

et al. 2024

IEEE Access

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The study focuses on analysing the high-level carrier lifetime (τHL) in 4H silicon carbide (4H-SiC) PiN diodes under varying temperatures and proton implantation doses. The objective is to identify an empirical law applicable in technology computer-aided design (TCAD) modelling for SiC devices, describing the dependence of carrier lifetime on temperature to gain insights into how irradiation dose may influence the τHL. We electrically characterize diodes of different diameters subjected to different proton irradiation doses and examine the variations in current-voltage (I-V) and ideality factor (n) curves under various irradiation conditions. The effects of proton irradiation on the epitaxial layer are analysed through capacitance-voltage (C-V) measurements. We correlate the observed effects on I-V, n, and C-V curves to the hypothesis of formation of acceptor-type defects related to carbon vacancies, specifically the Z1/2 defects generated during the irradiation process. The impact of irradiation on carrier lifetime is investigated by measuring τHL using the open circuit voltage decay (OCVD) technique at different temperatures on diodes exposed to various H + irradiation doses with constant ion energy. This investigation reveals the presence of a proportional relationship between 1/τHL and the dose of irradiated protons: the proportionality coefficient, referred to as the damage coefficient (KT), exhibits an Arrhenius-type dependence on temperature. OCVD-measured lifetime on the various diodes demonstrates a power-law dependence of lifetime on temperature. The exponent of this dependence varies with the irradiation dose, notably showing an increase in temperature dependence at the highest H + ion dose. This suggests a threshold-like dependence on H + irradiation dose in the τHLtemperature relationship.

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Section: B Measurements On Packaged Devicesmentioning

confidence: 99%

Section: Ocvd Measurements: 𝝉 𝑯𝑳 Extractionmentioning

confidence: 99%

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Sozzi,

Sapienza,

Chiorboli

et al. 2024

IEEE Access

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“…SiC has a lower drift layer resistance internally than Si-based switches and does not need to inject minority carriers to lower the on-resistance per unit area; high-speed switching is possible. Moreover, SiC has a higher doping concentration than Si-based switches, so it is possible to achieve low on-resistance [43][44][45]. PMF75-120-S002 (MITSUBISHI Electric Co. Ltd., Tokyo, Japan) is applied.…”

Section: Topology Selectionmentioning

confidence: 99%

Bidirectional Six-Pack SiC Boost–Buck Converter Using Droop Control in DC Nano-Grid

Kim,

Choi

2023

Sensors

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This paper proposes a bidirectional boost–buck converter employing a six-pack SiC intelligent power module using droop control in DC nano-grids. The topology is constructed as a cascaded structure of an interleaved boost converter and buck converter. A six-pack SiC intelligent power module (IPM), which is suitable for the proposed cascaded structure, is adopted for high efficiency and compactness. A hybrid control scheme, in which holding a particular switch always results in a turn-off or turn-on state according to the boost mode and the buck mode, is employed to reduce the switching losses. By applying the hybrid control scheme, the number of switching operations of the switches can be minimized. Since switchover of the current controller is not required, smooth transition is enabled not only from the buck mode to the boost mode but also vice versa. As a parallel control, a secondary control is employed with DC droop control, which has a trade-off relationship between voltage sag and current sharing. It is possible to enhance the accuracy of current sharing while effectively regulating the DC link voltage without voltage sag. This is verified experimentally using two modules as laboratory prototypes, of which the power rating is 20 kW each.

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“…The generator with the mercury (Hg) relay shown on the Fig. 2b presents idealized design [1], [9]. The generator can supply current of several amperes and it provides the fastest disconnection from all mechanical equipments in the order of tens of ns.…”

Section: Design's Aspects Of Measuring Circuitmentioning

confidence: 99%

On the design of measuring circuit for OCVD method

Papež,

Hájek

2023

ISPS'23 Proceedings

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The article deals with the matter that is often omitted by authors – design of measuring circuit. The most of publications describe theoretical background of the OCVD method or they interpret results obtained on modern SiC or 4H-SiC structures. But correct and relevant results are conditioned by corresponding measuring circuit. Even if the OCVD method is based “just” on recording of voltage response, measuring circuit must fulfill a lot of requirements from high-frequency techniques. Following article tries to explain these techniques.

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OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup

Cited by 5 publications

References 24 publications

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Bidirectional Six-Pack SiC Boost–Buck Converter Using Droop Control in DC Nano-Grid

On the design of measuring circuit for OCVD method

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