2007
DOI: 10.1002/qua.21480
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Odd electrons in molecular chemistry, surface science, and solid state magnetism

Abstract: ABSTRACT:A unified theoretical or computational odd-electrons approach is suggested to nanomaterials, making possible their consideration on the same conceptual basis as well as on the same computational footing. The current paper presents the approach application to the chemistry of fullerenes, carbon single-walled nanotubes, surface science of silicon crystal, as well as to the molecular magnetism of both molecular crystals composed of transitional metal complexes and solid polymerized fullerenes.

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Cited by 13 publications
(11 citation statements)
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“…For the first time, it has been faced both experimentally and computationally when performing nanolithography and atomic manipulation on the silicon Si(111)(7 × 7) surface by scanning tunneling microscopy (STM). As became clear later, the silicon surface, full of dangling bonds, presents an extensive reservoir of unpaired electrons, which explains not only peculiarities of atomic manipulation on the surface but also ensures its metallic conductivity and magnetic properties …”
Section: The Collectivity Of Graphene Electron System and Chemical Momentioning
confidence: 99%
“…For the first time, it has been faced both experimentally and computationally when performing nanolithography and atomic manipulation on the silicon Si(111)(7 × 7) surface by scanning tunneling microscopy (STM). As became clear later, the silicon surface, full of dangling bonds, presents an extensive reservoir of unpaired electrons, which explains not only peculiarities of atomic manipulation on the surface but also ensures its metallic conductivity and magnetic properties …”
Section: The Collectivity Of Graphene Electron System and Chemical Momentioning
confidence: 99%
“…Optimism expressed in theoretical papers where fullerene Si 60 ,67 SiNts,58–60 and silicene52 were considered, is mainly due to that all the calculations were performed in the closed‐shell approximation (similar to RHF) so that the problem concerning weak interacting but strongly correlated odd electrons was not taken into account. The odd‐electron concept explains the failure of a controllable STM atom writing on the silicon surfaces as well 68. Dangling bonds of the surface atoms are just another appearance of odd electrons.…”
Section: Siliceous Sp2‐like Compounds In the Light Of The Electron Comentioning
confidence: 99%
“…The molecule edges are not terminated, and the DA N image map has a characteristic view with a distinct framing by edge atoms since the main part of the unpaired electrons is concentrated in this area. This map presents a typical chemical portrait of any graphene molecule and exhibits the exceptional role of the circumference area, which looks like a typical 'dangling bonds' icon [20]. At the same time, the ACS image map intensity in the basal plane is of ~0.3 e in average so that the basal plane should not be discounted when it comes to chemical modification of the molecule thus disproving the common idea of its chemical inertness.…”
Section: Molecular Theory Of Graphene Hydrogenationmentioning
confidence: 82%