The interface between NiO and perovskite in inverted perovskite solar cells (PSCs) is a major factor that can limit device performance due to defects and inappropriate redox reactions, which cause nonradiative recombination and decrease in open‐circuit voltage (VOC). In the present study, a novel approach is used for the first time, where an amino acid (glycine (Gly), alanine (Ala), and aminobutyric acid (ABA))‐complexed NiO are used as interface modifiers to eliminate defect sites and hydroxyl groups from the surface of NiO. The Ala‐complexed NiO suppresses interfacial non‐radiative recombination, improves the perovskite layer quality and better energy band alignment with the perovskite, resulting in improved charge transfer and reduced recombination. The incorporation of the Ala‐complexed NiO leads to a PCE of 20.27% with enhanced stability under the conditions of ambient air, light soaking, and heating to 85 °C, as it retains over 82%, 85%, and 61% of its initial PCE after 1000, 500, and 350 h, respectively. The low‐temperature technique also leads to the fabrication of a NiO thin film that is suitable for flexible PSCs. The Ala‐complexed NiO is fabricated on the flexible substrate and achieved 17.12% efficiency while retaining 71% of initial PCE after 5,000 bending.