2022
DOI: 10.1002/pssa.202200211
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Off‐State Drain Leakage Current Mechanism in GaN High Electron Mobility Transistors from Thermal Storage Test

Abstract: The effect of the thermal storage test on GaN high electron mobility transistor (HEMT) is investigated in this study by observing off‐state drain leakage current and on‐state hysteresis and maximum transconductance. The recovery post thermal stress is also observed which points to native defects within the heterostructure as the leakage values after 72 hrs of recovery are measured to be one order higher than the pristine device. On‐state hysteresis recovery and off‐state drain leakage are dominated by similar … Show more

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