Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric

Abstract

The off-state leakage current characteristics of nano-scaled MOSFETs with high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components and the influences of fringing induced barrier lowering (FIBL) effect and drain induced barrier lowering (DIBL) effect on each component are also investigated. For nano-scaled devices with high-k gates, the source leakage current becomes the major component of the off-state leakage current. The influences of structure parameters on the off-state leakage current are studied. The off-state performance of the devices with high-k gate dielectric can be improved by optimizing the device structure parameters.