Off-state leakage currents in n-channel metal-oxide-semiconductor field-effect transistors with 10-nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

Abstract

The effects of nitridation and reoxidation on the off-state leakage currents of n-channel metal-oxide-semiconductor-field-effect transistors have been investigated. It is found that nitridation greatly increases the gate leakage in the low-field range but ensuing reoxidation can effectively reduce it. Nitridation-induced oxide traps could be responsible for this leakage, along with traps introduced during the source/drain implant. A trap-assisted tunneling model has been proposed to explain this off-state gate leakage.

The pH Response Drift of Thermally Grown Titanium Oxide Thin Films

“…V l is the self-discharge potential 13 of leakage 14 due to the porosity of the oxide film electrodes.…”

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

“…Defect-related breakdown has been well studied. The breakdown is dominated by the defects in the underlying substrate [66][67][68][69][70], by additional impurities in the oxide [71][72][73][74][75][76][77][78][79][80][81], by the surface roughness [82][83][84][85][86][87][88], etc. The requirements for the continuous scaling of the gate oxide have pushed the industry to concentrate on the defect-related breakdown.…”