Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors

Rahman, Faiz; Sun, Xingming; Watson, I. M.; Mutha, Dinesh Kumar Baid; Oxland, R.; Johnson, Nigel P.; Banerjee, Abhishek; Wasige, Edward

doi:10.1007/s00339-008-4848-9

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…Contacts to n-type GaN are now mostly formed by a Ti-containing metallization scheme, such as Ti/Ni/Au. 15 Here, Ti diffuses into GaN on annealing at temperatures around 900 °C, decomposing GaN, and forming titanium nitride (TiN). This leaves nitrogen vacancies behind that act as electron donors i.e., n-type dopants, making low-contact resistance n-type contacts possible.…”

Section: The Blue Ledmentioning

confidence: 99%

Solid-state lighting with wide band gap semiconductors

Rahman

2014

MRS Energy & Sustainability

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Gallium nitride is currently the wide band gap semiconductor material from which almost all commercial LEDs for solid-state lighting are manufactured but in the future other promising materials, such as zinc oxide (ZnO), are also likely to play a leading role.• With further developments in LED technology, leading to cheaper luminaires, perhaps based on gallium nitride-on-silicon material, LED lamps will largely replace tungsten incandescent bulbs in the years to come. ABSTRACTLight-emitting diodes (LEDs) made from wide band gap semiconductors, such as gallium nitride, are undergoing rapid development.Solid-state lighting with these LEDs is transforming patterns of energy usage and lifestyle throughout the world.With solid-state lighting gradually taking over from incandescent and fluorescent lighting, light-emitting diodes (LEDs) are very much the focus of research nowadays. This compact review takes a look at LEDs for lighting applications made from wide band gap semiconductors.A very brief history of electric lighting is included for completeness, followed by a description of blue-emitting LEDs that serve as pump sources for all 'white' LEDs. This is followed by a discussion on techniques to extract more light from the confines of LED chips through surface patterning. The thermal management of LEDs is perhaps the most important consideration in designing and using LED-based luminaires.This topic is discussed with regard to recent studies on LED reliability. The very promising development of gallium nitride-on-silicon LEDs is examined next followed by a discussion on phosphors for color conversion in LEDs. LED lighting has positively infl uenced both upscale and downscale illumination markets worldwide. Its societal impact is examined, with the review concluding with a look at efforts to produce LEDs from zinc oxide -a material that holds much promise for the future of solid-state lighting.vacuum tube era with devices based on gas-fi lled incandescent and fl uorescent bulbs illuminating our homes and workplaces. It is only over the last two decades that solid-state light generating devices in the form of light-emitting diodes (LEDs) have become available as an alternative for lighting up living spaces. 1 , 2 This review takes a look at their development, current status, and future prospects. After a brief historical introduction, the development and structure of the blue LED at the heart of all white LEDs are examined. This is followed by a description of various techniques that have been explored to extract more light from LED chips. Such techniques make LEDs brighter without increasing their energy consumption and thus enhance their attractiveness as energy-effi cient light sources. The relatively recent development of a gallium nitride-on-silicon material for low cost, high performance LEDs is examined next, followed by a look at the phosphor technology for white LEDs.The societal impact of LED lighting is then described with this review ending by examining the still distant goal of making LEDs out of zinc ox...

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Section: The Blue Ledmentioning

confidence: 99%

Solid-state lighting with wide band gap semiconductors

Rahman

2014

MRS Energy & Sustainability

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“…It is a well-known fact that the research of Ohmic contacts is a fundamental topic for semiconductors, and Ohmic contact is very important for semiconductor detector [9][10][11][12][13], because it affects the quantum efficiency and response time, and generally, the Ohmic contact resistance is the-smaller-the-better. Generally, the work temperature of the extended wavelength InGaAs detector is about 160-300 K. Therefore, on the one side, research on the temperature dependence of Ohmic contacts will be very meaningful to improve the performance of the In 0.83 Ga 0.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure

et al. 2015

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The temperature-dependent electrical properties of Au Ohmic contacts of In 0.83 Ga 0.17 As photodiodes were systematically investigated in the temperature range 163-373 K. For two annealed sample, the novel temperature behavior of the specific contact resistivity q sc was observed and exhibits similarity to that of 'metal,' describable by a T 2.01 and T 2.19 dependence. The microscopic interfacial analysis from transmission electron microscope (TEM) indicated that the Au protrusions penetrating into the contact layer, with a density of 9 9 10 7 and 2.0 9 10 8 cm -2 , respectively, could cause this phenomenon by acting as the more efficient conduction channels. By fabricating the extended wavelength In 0.83-Ga 0.17 As photodiode and deducing the series resistance from the current-voltage-temperature (I-V-T) characteristics, it is proved that the series resistance is mainly caused by the contact resistance of the metal-semiconductor (MS) interface. The results are very meaningful for the application of the extended wavelength In 0.83 Ga 0.17 As photodiode.

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Constructing and Enhancing the Superior LED: Photonic Crystal and Photonic Band-Gap Structures for Light Extraction and Emission Control

Rahman

Rue

2011

Comprehensive Nanoscience and Technology

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Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors

Cited by 3 publications

References 22 publications

Solid-state lighting with wide band gap semiconductors

Solid-state lighting with wide band gap semiconductors

Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure

Constructing and Enhancing the Superior LED: Photonic Crystal and Photonic Band-Gap Structures for Light Extraction and Emission Control

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