Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

Liu, Jinlong; Li, Chengming; Zhu, Rongfeng; Chen, Liangxian; Wang, Jingjing; Feng, Zhihong

doi:10.1007/s12613-013-0799-z

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…Even though different implantation energies, the slope in the electrical measurement were similar. This phenomenon is the same as that seen on a diamond surface treated with hydrogen plasma [18,20].…”

Section: Electrical Characterizationsupporting

confidence: 79%

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Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Valendolf,

Piñero,

Lloret

et al. 2024

Nanotechnology

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Due to its capacity to achieve nanometer-scale machining and lithography, focused ion beam (FIB) is an extended tool for semiconductor device fabrication and development, in particular, for diamond-based devices. However, some technological steps are still not fully optimized for its use. Indeed, ion implantation seems to affect the crystalline structure and electrical properties of diamond. For this study, a boron-doped ([B] ~ 1017 atoms·cm-3) diamond layer grown by CVD was irradiated using Ga+ by FIB, with 1nA current and 5, 20, and 30 keV of acceleration voltage. The Ga+ implanted diamond layer has been analysed through cathodoluminescence (CL) and scanning transmission electron microscopy (STEM)-related techniques. The beam penetration depth has been simulated by Monte Carlo calculations of both Ga+ (FIB) and e- (CL) beams at different energies. The comparative CL analysis of the layer as-grown and after implantation revealed peaks related to defects, such as A band, H3 center, and defects present in the green band region. The STEM studies for the 30 keV implanted sample showed that the diamond lattice is affected by the damage, evidencing amorphisation in the layer with a sp2/sp3 ratio of 1.37, estimated by EELS. Therefore, this study highlights the effects of the Ga+ implantation on the optical and structural characteristics of diamond, using different methods.

show abstract

Section: Electrical Characterizationsupporting

confidence: 79%

“…This hydrogen-terminated surface exhibits a lower resistance compared to the others as expected for a lightly boron-doped diamond. Therefore, linear characteristic here observed is attributed to the hydrogen termination of the asgrown diamond that implies an electron conduction at the surface [18].…”

Section: Electrical Characterizationmentioning

confidence: 59%

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Valendolf,

Piñero,

Lloret

et al. 2024

Nanotechnology

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show abstract

“…On the other hand, diamond exhibits superior characteristics, but the characteristics of diamond related semiconducting devices are still far from promising potentialities of diamond. Among them, fabricating good electrical contacts to diamond, with low resistance, good adherence, and high reliability is still difficult [1]. Therefore, the combined use of both materials can be an interesting approach, in particular for power electric devices.…”

mentioning

confidence: 99%

Diamond as substrate for 3C‐SiC growth: A TEM study

Lloret

Piñero

Araújo

et al. 2014

Physica Status Solidi (a)

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Orientation variation along growth direction of millimeter free-standing CVD diamond thinned by mechanical grinding

Wen

Wei

Liu

et al. 2014

Int J Miner Metall Mater

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Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

Cited by 8 publications

References 21 publications

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Diamond as substrate for 3C‐SiC growth: A TEM study

Orientation variation along growth direction of millimeter free-standing CVD diamond thinned by mechanical grinding

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Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

Cited by 8 publications

References 21 publications

Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

Diamond as substrate for 3C‐SiC growth: A TEM study

Orientation variation along growth direction of millimeter free-standing CVD diamond thinned by mechanical grinding

Contact Info

Product

Resources

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Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study