Ohmic contact to n-type Ge with compositional Ti nitride

Wu, Huanda; Huang, Wei; Lu, Weifang; Tang, Ruifan; Li, C.; Lai, Hongkai; Chen, S.Y.; Xue, Chunlai

doi:10.1016/j.apsusc.2013.08.028

Cited by 22 publications

(14 citation statements)

References 15 publications

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“…The Richardson constant of Ge is 143 A cm –2 K 2 , and the contact area is 100 × 100 μm 2 . Therefore, the SBH between GeSn and TiN was derived to be 0.49 eV, which agrees well with other reported values. , Figure b shows the band diagram of the TiN/GeSn heterojunction. The electron affinity and bandgap of GeSn with 8% Sn composition obtained from the literature are 4.0 and 0.60 eV, respectively .…”

Section: Resultssupporting

confidence: 90%

Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption

Liao

Kim

2021

ACS Appl. Mater. Interfaces

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We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn) photodetectors (PDs) with an extended photodetection range based on sub-bandgap absorption. Single-crystalline GeSn membranes transfer-printed on poly(ethylene terephthalate) are integrated with plasmonic TiN to form a TiN/GeSn heterojunction. Formation of the heterojunction creates a Schottky contact between the TiN and GeSn. A Schottky barrier height of 0.49 eV extends the photodetection wavelength to 2530 nm and further enhances the light absorption capability within the detection range. In addition, finite-difference time-domain simulation proves that the integration of TiN and GeSn could enhance average absorption from 0.13 to 0.33 in the near-infrared (NIR) region (e.g., 1400–2000 nm) and more than 70% of light is absorbed in TiN. The responsivity of the fabricated TiN/GeSn PDs is increased from 30 to 148.5 mA W–1 at 1550 nm. There is also an ∼180 nm extension in the optical absorption wavelength of the flexible TiN/GeSn PD. The enhanced performance of the device is attributed to the absorption and separation of plasmonic hot carriers via TiN and the TiN/GeSn junction, respectively. The effect of external uniaxial strain is also investigated. A tensile strain of 0.3% could further increase the responsivity from 148.5 to 218 mA W–1, while it is decreased to 102 mA W–1 by 0.25% compressive strain. In addition, the devices maintain stable performance after multiple and long bending cycles. Our results provide a robust and cost-effective method to extend the NIR photodetection capability of flexible group IV PDs.

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Section: Resultssupporting

confidence: 90%

Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption

Liao

Kim

2021

ACS Appl. Mater. Interfaces

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“…6 It was also reported that a TiN/Ge contact, prepared using atomic layer deposition, showed a pinned feature with a high U BN (0.55 eV), 7 which suggested that IL formation at the TiN/Ge interface did not occur, resulting in no FLP alleviation. Thus, a detailed structural analysis of the IL-induced FLP alleviation is important.…”

mentioning

confidence: 99%

Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge

Yamamoto

Mitsuhara

Hiidome

et al. 2014

Applied Physics Letters

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TiN/Ge contacts, prepared by direct sputter deposition from a TiN target, can alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. This work focuses on studying the origin of the FLP alleviation. Investigations on both the electrical properties and interfacial structures of TiN/Ge contacts showed that an amorphous interlayer (IL) containing nitrogen played an important role in the alleviation. For comparison, the properties of Ti/Ge contacts were also studied. Based on these results, the IL structure that induced the FLP alleviation was clearly shown and a model was proposed to explain the FLP alleviation.

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“…Figure 1d illustrates the energy band diagram of the SWCNT-Ge photodetector. Due to the strong Fermi-level pinning effect with charge neutrality level close to the valence band edge of n-Ge, there is a high Schottky barrier height (qΦb, 0.4~0.5 eV) [36,37], which can separate and drive photogenerated holes and electrons to SWCNT films and Ge substrate, respectively. With ozone treatment, an oxide layer (GeO x ) is formed at the interface, which greatly suppresses the leakage current and surface recombination.…”

Section: Characterization Of the Swcnt-ge Heterojunction Photodetectorsmentioning

confidence: 99%

Single-Walled Carbon Nanotube-Germanium Heterojunction for High-Performance Near-Infrared Photodetector

et al. 2022

Nanomaterials

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In this research, we report on a high-performance near-infrared (near-IR) photodetector based on single-walled carbon nanotube-germanium (SWCNT-Ge) heterojunction by assembling SWCNT films onto n-type Ge substrate with ozone treatment. The ozone doping enhances the conductivity of carbon nanotube films and the formed interfacial oxide layer (GeOx) suppresses the leakage current and carriers’ recombination. The responsivity and detectivity in the near-IR region are estimated to be 362 mA W−1 and 7.22 × 1011 cm Hz1/2 W−1, respectively, which are three times the value of the untreated device. Moreover, a rapid response time of ~11 μs is obtained simultaneously. These results suggest that the simple SWCNT-Ge structure and ozone treatment method might be utilized to fabricate high-performance and low-cost near-IR photodetectors.

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Ohmic contact to n-type Ge with compositional Ti nitride

Cited by 22 publications

References 15 publications

Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption

Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption

Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge

Single-Walled Carbon Nanotube-Germanium Heterojunction for High-Performance Near-Infrared Photodetector

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