Ohmic contacts and photoconductivity of individual ZnTe nanowires

Abstract

Ohmic contacts to individual ZnTe nanowires were formed using Ni/Au multilayer electrodes. Measurements based on four terminals were carried out to test the current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ni/Au contacts is ∼5.2×10−2 Ω cm2 and the intrinsic resistivity of the ZnTe nanowire is ∼369.1 Ω cm. The photoconductivity behavior of individual ZnTe nanowires was observed, which was analyzed with theory of carrier generation, trapping, and recombination.

One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications

“…The SiO x shell was insulative and could sever directly as a dielectric layer, facilitating the integration of ZnTe NWs in FETs and chemical and biological sensors. The p-type conduction of ZnTe NWs could be further enhanced by Cu + doping in solution [124], and the Ni/Au multilayer electrodes showed good ohmic contact with ZnTe NWs [125]. However, reliable n-type doping for ZnTe nanostructures remains a problem, and there is no report thus far.…”

“…p-ZnSe, p-CdTe, p-ZnTe, metals with high work functions, i.e., Au, Pd and Ni have exhibited reliable Ohmic contacts [52,77,[123][124][125].…”

High‐Performance Blue/Ultraviolet‐Light‐Sensitive ZnSe‐Nanobelt Photodetectors

“…or planar ZnSe homoepitaxial metalsemiconductor-metal (MSM) structures. [25][26][27] For example, only a 67.5% photocurrent/ dark-current ratio was observed on a vertical ZnO-nanowire photodetector at a bias of 5 V. [25] As one of the key factors for sensor performance, a slow time response usually limits the real application. The time responses both on rise and decay acquired from most of the reported 1D-structure-based photodetectors ranged from seconds to several tens of minutes, or even several hours, which possibly resulted from different experimental conditions and device geometries used.…”

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

“…The specific properties of II-VI materials can be fully exploited in such heterostructured NWs, with applications in photonics, photodetectors, 8 single photon emitters, 9 photovoltaics 10 including type-II configurations, various sensors, and magnetic objects. 11 In the case of tellurides, (Zn,Mg)Te shells have been shown to enhance the photoluminescence efficiency by several orders of magnitude with respect to that of bare ZnTe NW.…”