Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers

Arkhipova, Ekaterina A.; Демидов, Е. В.; Дроздов, М. Н.; Kraev, S. A.; Shashkin, V. I.; Lobaev, M. A.; Vikharev, A. L.; Горбачев, А. М.; Radishchev, D. B.; Исаев, В. А.; Богданов, С. А.

doi:10.1134/s106378261910004x

Cited by 2 publications

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“…To create ohmic contacts, we chose the composition Ti/Mo/Au with a layer thickness of 20 nm for Ti, 30 nm for Mo, and 100 nm for Au. The creation of ohmic contacts to a heavily doped diamond layer was described in detail in [21]. The contact resistances were measured by the transmission line modeling (TLM) method using the Keithley SCS 4200 measuring system.…”

Section: Resultsmentioning

confidence: 99%

“…The contact resistances were measured by the transmission line modeling (TLM) method using the Keithley SCS 4200 measuring system. The contacts turned out to be ohmic without additional thermal annealing and had a contact resistance of 10 −4 -10 −5 Ohm•cm 2 [21]. The surface p + layer between the contact pads was etched away; therefore, the current flow in the structure occurred only along the buried delta layer.…”

Section: Resultsmentioning

confidence: 99%

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Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates

Lobaev¹,

Vikharev²,

Gorbachev³

et al. 2022

Nanosystems: Phys. Chem. Math.

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This work is devoted to experimental study of boron doped delta layers in CVD diamond. Delta layers with a thickness of 0.8 -2 nm were grown with a concentration of boron atoms of (1 -1.7)•10 21 cm −3 , and localized inside undoped defect-free diamond. The layers thickness and boron concentration were measured by secondary ion mass spectrometry (SIMS). The surface density and the Hall mobility of holes, the layer resistance at room temperature, and temperature dependences of these parameters are presented. Performed electrical measurements showed that, despite the perfect (from the point of view of the possibility of quantum effects) profile of delta layers, no significant increase was observed in the hole mobility compared to uniform doping with the same concentration of boron atoms. An explanation is proposed for the results of electrical measurements based on calculations of the delta layer profile and the concentration of delocalized holes depending on the layer thickness. It is discussed which parameters of the boron doped delta layers are needed in order to obtain a significant increase of the hole mobility in heavily doped diamond. KEYWORDS CVD diamond, boron delta-doping, electrical measurements, hole mobility ACKNOWLEDGEMENTS The work was carried out within the frame of the Federal research center Institute of Applied Physics of the Russian Academy of Sciences project No. 0030-2021-0003. We express our sincere thanks to Dr. J. Butler for a fruitful discussion on delta doping of diamond during his collaboration with IAP RAS

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%