Ohmic contacts to <i>p</i>-type InP using Be-Au metallization

Temkin, H.; McCoy, R. J.; Keramidas, V. G.; Bonner, W. A.

doi:10.1063/1.91539

Cited by 46 publications

(6 citation statements)

References 10 publications

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“…Similar contacts using either Mn or Mg in place of Zn were not ohmic [63], but a Pd/Zn/Pd contact without the use of Ge was fabricated with contact resistivity in the mid 10-5 Q-cm2 [60]. Finally, contacts based on reducing the surface semiconductor bandgap using W-In-Sb to p-type InP with contact resistivity in the low 10-5 range were also reported [59].…”

Section: Contacts To Inpmentioning

confidence: 99%

“…The conventional p-type ohmic contact to InP is AuZn based or AuBe based [60,61] although other p-type dopants have also been used with Au. Contact resistivity is dependent on the substrate doping and a typical value of 3.7 x 10-5 Qcm2 is achieved for doping level of 1018 cm-3 [60]. Alternative p-type contacts with better morphology have been reported using several approaches.…”

Section: Contacts To Inpmentioning

confidence: 99%

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A survey of ohmic contacts to III-V compound semiconductors

Ren²,

et al. 1997

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A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g. GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n-and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A

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Section: Contacts To Inpmentioning

confidence: 99%

Section: Contacts To Inpmentioning

confidence: 99%

A survey of ohmic contacts to III-V compound semiconductors

Ren²,

et al. 1997

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“…The contact metal usually contains a small amount of dopant. The contact metallizations reported for the InP/InGaAsP material system contain a small amount of dopant within an Au base (1,2,8).…”

Section: Methodsmentioning

confidence: 99%

“…After metallization, {he samples were alloyed in a forming gas atmosphere at 420~ The samples were placed in the furnace for 10 min, but approximately 4 min were required for the sample temperature to reach equilibrium. This same alloying procedure was applied to GaA1As and p-InP by Keramidas (3) and Temkin et al (2), respectively.…”

Section: Methodsmentioning

confidence: 99%

Metallurgical Behavior of Gold‐Based Ohmic Contacts to the InP / InGaAsP Material System

Camlibel¹,

Chin²,

Ermanis³

et al. 1982

J. Electrochem. Soc.

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The performance and reliability of semiconductor devices depend critically on the electrical quality and stability of the metal contacts. Gold‐based metallizations are generally used to form ohmic contacts and Schottky barriers to the III–V material systems. In this paper, we study the interfacial reaction of Be‐Au and Sn‐Au ohmic contact metallizations on normalInP , normalInGaAsP , and normalInGaAs . Staining, cathodoluminescence imaging, and x‐ray microanalysis are used to analyze the metallurgical interactions. Under typical alloying conditions for ohmic contact formation (420°C for 10 min), the depth of metal‐semiconductor interaction is found to depend on the amount of gold deposited. For the same thickness of contact metallization, this depth is largest for normalInGaAs , followed by normalInGaAsP and then normalInP . Analysis of normalInP/normalInGaAsP LED's shows that the 3 μm thick Sn‐Au n‐contact penetrates ∼3 μm into the normalInP window layer. The 2.9 kÅ thick Be‐Au p‐contact completely penetrates the contact layer which is typically 0.5 μm of normalInGaAsP false(λ=1.1 μnormalmfalse) or normalInGaAs false(λ=1.6 μnormalmfalse) .

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“…It was reported that the annealing temperature was reduced by about 20°C with the addition of Pd or Ni to AuZn contacts to p-InP, while the contact resistivity deteriorated. 10,23 However, the addition of Sb enabled the reduction of the annealing temperature of ϳ100°C in addition to greatly improving the contact resistivity. To the best of our knowledge, such a significant effect has not been reported previously.…”

Section: B Simultaneous Annealing For P-and N-inp Ohmic Contactsmentioning

confidence: 98%

Effect of the first antimony layer on AuZn ohmic contacts to p-type InP

Yamaguchi

Asamizu

Okada

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The electrical properties of the Sb/Zn/Au/Nb ohmic contacts to p-type InP were investigated, where a slash (/) indicates the deposition sequence. The first Sb layer improved the contact resistivity and reduced the optimum annealing temperature, compared with the Au/Zn/Au/Nb contacts whose first layer was Au. The minimum contact resistivity of 4×10−5 Ω cm2 was obtained from the Sb(3 nm)/Zn(5 nm)/Au(10 nm)/Nb(50 nm) contacts annealed at 325 °C for 2 min. The interfacial microstructure was studied using the cross-sectional transmission electron microscope. It was considered that the deposited Sb deoxidized and removed the native oxides of the InP surface and that facilitated the upper Au and Zn diffusion into InP.

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Ohmic contacts to p-type InP using Be-Au metallization

Cited by 46 publications

References 10 publications

A survey of ohmic contacts to III-V compound semiconductors

A survey of ohmic contacts to III-V compound semiconductors

Metallurgical Behavior of Gold‐Based Ohmic Contacts to the InP / InGaAsP Material System

Effect of the first antimony layer on AuZn ohmic contacts to p-type InP

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