Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

Jiang, Jie’an; Xu, Houqiang; Sheikhi, Moheb; Li, Liang; Yang, Zhenhai; Hoo, Jason; Guo, Shiping; Zeng, Yuheng; Guo, Wei; Ye, Jichun

doi:10.1364/oe.27.016195

Cited by 10 publications

(5 citation statements)

References 30 publications

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“…The µ-LEDs were uniformly distributed on the surface, and the facet length and pyramid height were 15 and 26 µm, respectively. The growth condition of the GaN template was similar to that of the pure GaN thin film reported in our previous work [14]. With a low V/III ratio and a low carrier gas N 2 /H 2 flow ratio, the smooth semi-polar-rather than non-polar planes-were formed on the sidewall during the SAG process [17].…”

Section: Resultsmentioning

confidence: 68%

“…Furthermore, the SAG technique can effectively reduce the threading dislocation density, which is blocked by a SiO x or SiN x mask [9][10][11][12][13]. Last of all, biaxial strain stemming from the thermal expansion and lattice mismatch during the heteroepitaxial growth can also be relieved during SAG, contributing to lower internal polarization [14][15][16]. Overall, SAG has been demonstrated to be a promising approach in the realization of next-generation µ-LEDs [17].…”

Section: Introductionmentioning

confidence: 99%

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Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth

Jiang

Chen

et al. 2021

Photonics

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Pyramid-shaped InGaN/GaN micro-light-emitting diodes (μ-LEDs) were grown on a sapphire substrate using the selective area growth technique. A stable emission wavelength of a single μ-LED pyramid at 412 nm was observed under an injection current from 0.05 to 20 mA, despite the non-uniformity of the thickness and composition of the multiple quantum wells (MQWs) on the sidewall. An efficient carrier confinement and, thus, a high luminescence intensity were demonstrated in the middle of the sidewall through spatial-resolved cathodoluminescence (CL) characterization and were predicted by theoretical simulations. An ultra-high output power density of 1.37 kW/cm2 was obtained from the single μ-LED pyramid, illustrating its great potential for application in high-brightness micro-displays and in virtual reality and augmented reality (VR and AR) applications.

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Section: Resultsmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth

Jiang

Chen

et al. 2021

Photonics

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“…Laser lift-off (LLO) processes paved the way for the development of thin-film microdisks, whereby the entire GaN epi-structure is detached from its sapphire substrate, eliminating the need for undercutting [46]. The GaN film is initially wafer-bonded to another substrate; the metallic eutectic bonding layer also function as a reflector for light confinement [47].…”

Section: Introductionmentioning

confidence: 99%

Comparison of lasing characteristics of GaN microdisks with different structures

Zi¹,

Fu²,

Cheung³

et al. 2022

J. Phys. D: Appl. Phys.

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The lasing characteristics of optically-pumped GaN microdisks of different configurations, including microdisks with undercuts, microdisks with cladding layers and thin-film microdisks are investigated in this paper. The microdisks, fabricated from a range of epitaxial structures containing blue-light emitting InGaN/GaN multi-quantum wells grown on Si, sapphire or GaN substrates, undergo different processes to form 8µm whispering-gallery mode (WGM) microdisks with different degrees of optical confinement. The microdisks have lasing thresholds ranging from 2.1 to 8.3 mJ/cm2 and quality factors of 1400 to 4200. The lasing characteristics are correlated to the material qualities, optical confinement as well as the overlap of the mode with the MQWs in the microdisk structures. The undercut microdisks benefit from high optical confinement factors but poor overlap factor, while the thin film structures have high overlap factors but low confinement due to absorption by the metallic bonding layers. The findings provide useful insight on ways to optimize GaN microdisk for improving lasing performances.

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“…It can be seen from Figure d that the side faces of the microdisk have a uniform panchromatic CL behavior with no obvious black spots. It is believed that it may be related to the reduction of nonradiative recombination defects on the (101̅1) plane caused by the lateral overgrowth of the GaN microdisk, , such as dislocation as a common nonradiative recombination center. However, it can be seen from Figure d that the brightness of the panchromatic CL is stronger on the (0001) plane than on the side face (101̅1).…”

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confidence: 99%

“…A great deal of meaningful work has been done in recent years on the effect of traps on the optical properties of substances. − GaN microstructure has wide application prospects in UV lasers, − LEDs, , UV photodetectors, and network emitters . Defect-related optical processes (yellow luminescence (YL) and green luminescence (GL)) would compete with near-bandgap emission (NBE) for carrier recombination channels, − thereby reducing device efficiency.…”

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confidence: 99%

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk

Liu

et al. 2022

Nano Lett.

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Yellow-green luminescence (YGL) competes with nearbandgap emission (NBE) for carrier recombination channels, thereby reducing device efficiency; yet uncovering the origin of YGL remains a major challenge. In this paper, nearly stress-free and low dislocation density self-assembled GaN microdisks were synthesized by Na-flux method. The YGL of GaN microdisks highly depend on their polar facets. Variable accelerating voltage/power CL, variable temperature PL, and Raman spectroscopy are further performed to clarify the origin of polarity dependence of GaN microdisk YGL behavior, which indicates its independence of dislocations, surface effects, stress, crystalline quality, and gallium vacancies. It was found that the incorporation ability of carbon impurities in the polar (0001) facet is greater than that in the semipolar (101̅ 1) facets, producing higher content of C N or C N O N defects, resulting in a more pronounced YGL in the polar (0001) facet of GaN.

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Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

Cited by 10 publications

References 30 publications

Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth

Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth

Comparison of lasing characteristics of GaN microdisks with different structures

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk

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