On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics

Abstract

For the realization of high breakdown voltages in power electronics, a low‐cost technology is developed, which allows the deep diffusion of aluminum from a physically deposited source. The approach requires only standard process steps that are already established in the manufacturing of silicon power devices. The sheet concentration of the diffusion profiles exceeds, with 8 × 1013 cm−2, the ones of comparable implanted and annealed profiles by up to a factor of two. A full numerical analysis of the resulting profiles is provided.

Multi-Layer Compound Passivation and Dual-P Diffusion Enhanced Si Power Diode Performance

“…Lifetime control techniques [5] and low injection efficiency techniques was introduced to reach fast reverse recovery time and the forward voltage drop based on the classical structure [6]. Employing Schottky contact on anode side can effectively reduce the reverse recovery loss because it lowers the hole injection efficiency with the concept of metal semiconductor contact [7,8].Overcoming low solubility in silicon and its high reactivity with oxygen, aluminum as dopant can be introduced to improve reverse withstand voltage [9]. Device passivation is an old and developing subject, whether in traditional diodes or new devices.…”