On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications

Zhao, Jiuxuan; Milanese, Tommaso; Gramuglia, Francesco; Keshavarzian, Pouyan; Tan, Shyue Seng; Tng, Michelle; Lim, Louis; Dhulla, Vinit; Quek, Elgin; Lee, Myungjae; Charbon, Edoardo

doi:10.1109/jstqe.2022.3161089

Cited by 13 publications

(4 citation statements)

References 27 publications

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“…In 1999, McIntyre et al established a comprehensive theoretical model for the impact ionization process of SPADs [8,9]. After 60 years of rapid development, the materials, structures and circuits of SPADs have been optimized, and the type and performance of 2 of 14 SPADs have been significantly improved, accelerating the large-scale application of singlephoton detectors in fields such as quantum communication, light detection and ranging (LIDAR), and medical detection [5,[10][11][12][13]. The key to the performance improvement is the availability of high-quality materials with higher purity and fewer defects, as well as novel SPAD structures.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes

Xun,

Li,

Liu

2024

Electronics

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In this paper, the effects of proton and gamma irradiation on reach-through single-photon avalanche diodes (SPADs) are investigated. The I–V characteristics, gain and spectral response of SPAD devices under proton and gamma irradiation were measured at different proton energies and irradiation bias conditions. Comparison experiments of proton and gamma irradiation were performed in the radiation environment of geosynchronous transfer orbit (GTO) with two different radiation shielding designs at the same total ionizing dose (TID). The results show that after 30 MeV and 60 MeV proton irradiation, the leakage current and gain increase, while the spectral response decreases slightly. The leakage current degradation is more severe under the “ON”-bias condition compared to the “OFF”-bias condition, and it is more sensitive to the displacement radiation damage caused by protons compared to gamma rays under the same TID. Further analysis reveals that the non-elastic and elastic cross-section of protons in silicon is 1.05 × 105 times greater than that of gamma rays. This results in SPAD devices being more sensitive to displacement radiation damage than ionizing radiation damage. Under the designed shielding conditions, the leakage current, gain and spectral response parameters of SPADs do not show significant performance degradation in the orbit.

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Section: Introductionmentioning

confidence: 99%

Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes

Xun,

Li,

Liu

2024

Electronics

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“…One method to reduce the recovery time is implementing an array of SPADs in parallel, known as silicon photomultipliers (SiPMs) or multiple pixel photon counters (MPPCs) [7]. This type of SPAD array has been explored in a wide range of applications, including time-offlight positron emission tomography (TOF-PET) [8], visible light communication (VLC) [9]- [13], light fidelity (LiFi) [14], [15] and light detection and ranging (LIDAR) [16], [17]. In recent years, complementary metal-oxide-semiconductor (CMOS) SPAD arrays for optical receivers were investigated [18], [19].…”

Section: Introductionmentioning

confidence: 99%

Implementation and Evaluation of SiPM-Based Photon Counting Receiver for IoT Applications

Li,

Chitnis

2024

IEEE Internet Things J.

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Silicon Photomultipliers (SiPMs) are photoncounting detectors with great potential to improve the sensitivity of optical receivers. Recent studies of SiPMs in communication focus on the speed rather than the power consumption of the receiver. The gain bandwidth product (GBP) of the amplifiers in these post-SiPM readout circuits is significantly higher than the target data rate. Additionally, the SiPM experiments for optical communication are performed using an offline method which uses instruments including oscilloscopes and personal computers to process chunks of the transmitted data. In this work, we have developed an embedded real-time field-programmable gate array (FPGA) based system to evaluate a commercially available 1 mm 2 SiPM. The implemented real-time system achieves data rates from 10 kbps to 1 Mbps with a bit error rate (BER) below 10 −3 approaching the Poisson limit. Results showed that reducing either the dark count rate or increasing the data rate leads to lower dark counts per bit time, hence less power penalty to maintain a probability of error (PE) of 10 −3 . The numerically simulated results indicated that to maintain the Poisson limit, the minimum GBP of the amplifier in the post-SiPM readout circuit is 120 MHz based on the proposed setup within the tested data rates. This GBP limitation is determined by the noise floor of the read-out circuit. The analysis of the minimum GBP and electrical power consumption of the receiver in photon counting and BER enables the potential future adoption of this receiver technology when high optical sensitivity is required, such as visible light communications (VLC) for low data rate Internet of Things (IoT) applications.

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“…A 25-µm diameter off-chip InGaAs SPAD was actively quenched from an over-voltage of 5.5 V in 920 ps according to post-layout simulation with a BiCMOS AQC dissipating 30 mW [15]. A 55 nm Bipolar-CMOS-DMOS (BCD) process was only used for the implementation of a SPAD using a pure CMOS AQC [16]. We used bipolar transistors in the comparator of an AQC in 0.35 µm BiCMOS to reduce the reaction time [17].…”

Section: Introductionmentioning

confidence: 99%

A BiCMOS Active Quencher Using an Inverter-Based Differential Amplifier in the Comparator

Goll,

Hofbauer,

Zimmermann

2024

IEEE Solid-State Circuits Lett.

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For fast switching off of a firing single-photon avalanche diode, an active quenching circuit in 0.35 µm BiCMOS technology with a very fast quenching slew rate is introduced. Quenching transients measured at an integrated small prober pad are shown. An NPN transistor as quenching switch leads to an active quenching time of 250 ps and a quenching slew rate of 21.1 V/ns. A self-biased two-inverter differential amplifier used in the comparator makes this fast quenching possible. By the implementation of cascoding, the excess bias voltage of the integrated SPAD can be doubled to 6.6 V with respect to the nominal supply voltage of 3.3 V of the BiCMOS process used. Active resetting of the SPAD is achieved in 725 ps. The power consumption of the BiCMOS quenching circuit is 16.3 mW at 40 Mcounts/s and 3 mW in the idle state.

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On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications

Cited by 13 publications

References 27 publications

Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes

Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes

Implementation and Evaluation of SiPM-Based Photon Counting Receiver for IoT Applications

A BiCMOS Active Quencher Using an Inverter-Based Differential Amplifier in the Comparator

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