On Analytical Modeling of Hopping Transport of Charge Carriers and Excitations in Materials with Correlated Disorder

Saunina, Anna Yu.; Huang, Libai; Nikitenko, Vladimir R.; Prezhdo, Oleg V.

doi:10.1021/acs.jpclett.4c00097

Cited by 2 publications

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“…Thus, in eq 39 A similar recent modification of the ETC made it possible to obtain an analytical expression for the temperature and field dependence of mobility in materials with correlated disorder. 35 An apparently weak field, e.g., 10 6 V/m, which is insignificant at room temperature, significantly increases the quantum yield at low temperatures; see Figure 6 a. One takes this circumstance into account when analyzing the temperature dependence of the quantum yield, obtained experimentally or by MC simulation.…”

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confidence: 99%

“…The distance r 0 serves as a spatial scale. Thus, in eq A similar recent modification of the ETC made it possible to obtain an analytical expression for the temperature and field dependence of mobility in materials with correlated disorder . An apparently weak field, e.g., 10 6 V/m, which is insignificant at room temperature, significantly increases the quantum yield at low temperatures; see Figure a.…”

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confidence: 95%

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Extremely Non-Equilibrium Hopping Transport and Photogeneration Efficiency in Organic Semiconductors: An Analytic Approach

Toropin,

Huang,

Nikitenko

et al. 2024

J. Phys. Chem. Lett.

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An analytical model of highly nonequilibrium hopping transport of charge carriers in disordered organic semiconductors has been developed. In particular, the initial time interval is considered when transport is controlled by hops down in energy. The model is applied to the calculation of the separation probability of geminate pairs in a semiconductor with a Gaussian energy distribution of localized states. This probability determines the photogeneration efficiency. The temperature dependence of the separation probability is obtained and shown to be much weaker than predicted by the classical Onsager model, in agreement with experiment and Monte Carlo simulations. The field dependence is taken into account using a modified effective temperature method.

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confidence: 99%

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confidence: 95%