On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits

Cui, Qiang; Liou, Juin J.; Hajjar, Jean-Jacques; Salcedo, Javier A.; Zhou, Yuanzhong; Parthasarathy, S.

doi:10.1007/978-3-319-10819-3

Cited by 6 publications

(1 citation statement)

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“…The ESD-induced parasitic effects can severely aff IC performance. For example, a CESD of a few tens of pF will seriously affect almost specs of radio-frequency (RF) ICs [7][8][9][10]. Such ESD-induced design overhead effects, herent to in-Si PN-based ESD protection structures, are becoming increasingly unaccep ble to advanced ICs in advanced technology nodes, e.g., millimeter-wave ICs for 5G wi less systems and high-data-rate serializer/deserializer (SerDes) ICs for communicatio This, therefore, calls for truly disruptive ESD protection solutions for future ICs in n onodes and beyond.…”

Section: Introductionmentioning

confidence: 99%

Graphene-Based ESD Protection for Future ICs

Pan

Hao

et al. 2023

Nanomaterials

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On-chip electrostatic discharge (ESD) protection is required for all integrated circuits (ICs). Conventional on-chip ESD protection relies on in-Si PN junction-based device structures for ESD. However, such in-Si PN-based ESD protection solutions pose significant challenges related to ESD protection design overhead, including parasitic capacitance, leakage current, and noises, as well as large chip area consumption and difficulty in IC layout floor planning. The design overhead effects of ESD protection devices are becoming unacceptable to modern ICs as IC technologies continuously advance, which is an emerging design-for-reliability challenge for advanced ICs. In this paper, we review the concept development of disruptive graphene-based on-chip ESD protection comprising a novel graphene nanoelectromechanical system (gNEMS) ESD switch and graphene ESD interconnects. This review discusses the simulation, design, and measurements of the gNEMS ESD protection structures and graphene ESD protection interconnects. The review aims to inspire non-traditional thinking for future on-chip ESD protection.

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Section: Introductionmentioning

confidence: 99%