On-chip integration of 2D Van der Waals germanium phosphide (GeP) for active silicon photonics devices

Dushaq, Ghada; Paredes, Bruna; Villegas, Juan Esteban; Tamalampudi, Srinivasa Reddy; Rasras, Mahmoud

doi:10.1364/oe.457242

Cited by 8 publications

(7 citation statements)

References 62 publications

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“…For instance, they possess broadband detection due to the narrow and wide tunable bandgap energies (0.51-1.68 eV) [38], [41], [42], their integration capabilities on various substrate materials, and they exhibit sensitivity to the light polarization. According to our experiment and other theoretical research, these materials are chemically and dynamically stable [27], [41],…”

Section: Introductionmentioning

confidence: 63%

“…The multilayer GeAs flakes were exfoliated from their bulk crystals and transferred on top of the four-waveguide crossing structure by using a deterministic dry transfer process [21], [51], [27], [52]. The flakes were commercially available from 2D Semiconductors.…”

Section: A Geas Anisotropymentioning

confidence: 99%

“…Recent advances in the heterogeneous integration of layered materials on silicon photonics (SiPh) platforms have been impressive [20], [21], [22], [23], [24], [25], [26], [27]. For instance, graphene demonstrated an extraordinary performance for onchip modulators and photodetectors [28], [29], while it has a universal absorption of ∼2.3% in the visible and near-infrared spectrum [30].…”

Section: Introductionmentioning

confidence: 99%

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Anisotropic Van Der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing

Dushaq

Villegas

Paredes

et al. 2023

J. Lightwave Technol.

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In-plane optical anisotropy plays a critical role in manipulating light in a wide range of planner photonic devices. In this study, the strong anisotropy of multilayer 2D GeAs is leveraged and utilized to validate the technical feasibility of on-chip light management. A 2D GeAs is stamped into an ultra-compact silicon waveguide four-way crossing optimized for operation in the Ooptical band. The measured optical transmission spectra indicated a remarkable discrepancy between the in-plane crystal optical axes with an attenuation ratio of ∼3.5 (at 1330 nm). Additionally, the effect of GeAs crystal orientation on the electro-optic transmission performance is demonstrated on a straight waveguide. A notable 50% reduction in responsivity was recorded for devices constructed with cross direction compared to devices with a crystal a-direction parallel to the light polarization. This extraordinary optical anisotropy, combined with a high refractive index ∼4 of 2D GeAs, opens possibilities for efficient on-chip light manipulation in photonic devices.

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Section: Introductionmentioning

confidence: 63%

Section: A Geas Anisotropymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Anisotropic Van Der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing

Dushaq

Villegas

Paredes

et al. 2023

J. Lightwave Technol.

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“…Given our method for transfer, the fabricated devices are not perfectly aligned with the crystal orientation that maximizes the optical absorption [19a] . More details on the deterministic transfer process have been reported in our previous works [10a,21] . A scanning electron microscopy (SEM) image of a fabricated device is shown in Figure 1c.…”

Section: Device Design and Experimental Resultsmentioning

confidence: 94%

“…[ 8 ] Notably, graphene photodetectors with bandwidths exceeding 100 GHz on the silicon photonics platform have been demonstrated. [ 9 ] However, most studies have focused on telecom bands, [8a,10] while integrated near‐infrared (NIR) photodetectors are still limited in their exploration.…”

Section: Introductionmentioning

confidence: 99%

High‐Speed Waveguide‐Integrated InSe Photodetector on SiN Photonics for Near‐Infrared Applications

Tamalampudi,

Villegas,

Dushaq

et al. 2023

Advanced Photonics Research

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On‐chip integration of two‐dimensional (2D) materials holds immense potential for novel optoelectronic devices across diverse photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra‐high carrier mobility and outstanding photoresponsivity. Herein, a high‐speed photodetector based on a multilayer 90 nm thick InSe integrated on a silicon nitride (SiN) waveguide is reported. The device exhibits a remarkable low dark current density of ≈40 nA μm−2, a photoresponsivity of 0.38 A W−1, and an external quantum efficiency of ≈48.4%. Tested under ambient conditions at near‐infrared 976 nm wavelength, it exhibits an absorption coefficient of 0.11 dB μm−1. Additionally, the photodetector demonstrates a 3‐dB radiofrequency bandwidth of 85 MHz and an open‐eye diagram at data transmission of 1 Gbit s−1. Based on these exceptional optoelectronic advantages, integrated multilayer InSe enables the realization of active photonic devices for a range of applications, such as short‐reach optical interconnects, LiDAR imaging, and biosensing.

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Electro-optic tuning in composite silicon photonics based on ferroionic 2D materials

Dushaq,

Serunjogi,

Tamalampudi

et al. 2024

Light Sci Appl

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Tunable optical materials are indispensable elements in modern optoelectronics, especially in integrated photonics circuits where precise control over the effective refractive index is essential for diverse applications. Two-dimensional materials like transition metal dichalcogenides (TMDs) and graphene exhibit remarkable optical responses to external stimuli. However, achieving distinctive modulation across short-wave infrared (SWIR) regions while enabling precise phase control at low signal loss within a compact footprint remains an ongoing challenge. In this work, we unveil the robust electro-refractive response of multilayer ferroionic two-dimensional CuCrP2S6 (CCPS) in the near-infrared wavelength range. By integrating CCPS into silicon photonics (SiPh) microring resonators (MRR), we enhance light-matter interaction and measurement sensitivity to minute phase and absorption variations. Results show that electrically driven Cu ions can tune the effective refractive index on the order of 2.8 × 10−3 RIU (refractive index unit) while preserving extinction ratios and resonance linewidth. Notably, these devices exhibit low optical losses and excellent modulation efficiency of 0.25 V.cm with a consistent blue shift in the resonance wavelengths among all devices for either polarity of the applied voltage. These results outperform earlier findings on phase shifters based on TMDs. Furthermore, our study demonstrates distinct variations in electro-optic tuning sensitivity when comparing transverse electric (TE) and transverse magnetic (TM) modes, revealing a polarization-dependent response that paves the way for diverse applications in light manipulation. The combined optoelectronic and ionotronic capabilities of two-terminal CCPS devices present extensive opportunities across several domains. Their potential applications range from phased arrays and optical switching to their use in environmental sensing and metrology, optical imaging systems, and neuromorphic systems in light-sensitive artificial synapses.

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On-chip integration of 2D Van der Waals germanium phosphide (GeP) for active silicon photonics devices

Cited by 8 publications

References 62 publications

Anisotropic Van Der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing

Anisotropic Van Der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing

High‐Speed Waveguide‐Integrated InSe Photodetector on SiN Photonics for Near‐Infrared Applications

Electro-optic tuning in composite silicon photonics based on ferroionic 2D materials

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