2018
DOI: 10.1109/jstqe.2018.2815906
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On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si

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Cited by 73 publications
(35 citation statements)
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“…Data processing on photonic platforms is a promising approach because of the potential advantages over electrical approaches, where large bandwidth, high efficiency, ultrafast modulation speed, and low cross talk are crucial [4]. Critical photonic components, such as lasers [5], modulators [6], switches [7], filters [8], multiplexers [9,10], photodetectors [11][12][13][14][15], and memory cells, have been developed on different material platforms, such as silicon nitride (SiN), GeSi, III-V semiconductors, and others [16][17][18], with silicon-on-insulator (SOI) being the dominant platform. Furthermore, Si waveguides, owing to their thermal conductivity performance, have the potential to be doped to act as integrated heaters to enable wider applications [19].…”
Section: Introductionmentioning
confidence: 99%
“…Data processing on photonic platforms is a promising approach because of the potential advantages over electrical approaches, where large bandwidth, high efficiency, ultrafast modulation speed, and low cross talk are crucial [4]. Critical photonic components, such as lasers [5], modulators [6], switches [7], filters [8], multiplexers [9,10], photodetectors [11][12][13][14][15], and memory cells, have been developed on different material platforms, such as silicon nitride (SiN), GeSi, III-V semiconductors, and others [16][17][18], with silicon-on-insulator (SOI) being the dominant platform. Furthermore, Si waveguides, owing to their thermal conductivity performance, have the potential to be doped to act as integrated heaters to enable wider applications [19].…”
Section: Introductionmentioning
confidence: 99%
“…[321]. Most demonstrations of integrated modulators have focused on performance at IR wavelengths; however, a number of the modulator material systems that have been explored are transmissive in the UV-tovisible wavelength range, for instance, SiN [335,336], InGaN/GaN [337], AlN [328,338], and LiNbO 3 [339][340][341]. Whatever the most promising materials may be, we anticipate that this switch technology will be under widespread and rapid development over the next few years given the crucial role switching plays in trapped-ion control.…”
Section: B Integrated Photonics For Light Deliverymentioning
confidence: 99%
“…77,78) The monolithic integration of edge-emitting laser diodes together with modulators, amplifiers, and detectors forming a twosection device, has recently been investigated. Such on-chip integration offers many advantages, including small footprint, high speed, and low power consumption.…”
Section: Integrated Photonics For Visible Light Communicationsmentioning
confidence: 99%