2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.
DOI: 10.1109/isscc.2003.1234353
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On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction

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Cited by 88 publications
(45 citation statements)
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“…Millimeter-wave NMOSFET models are established by extracting the parasitic components based on on-wafer measurements (Doan, 2005). The slow-wave transmission line (SWTL) (Cheung, 2003) shown in Fig. 15 is used for implementing the quarter-wavelength transmission lines and the networks between the circuit and the pads to reduce the size of the modulator.…”
Section: Millimeter-wave Cmos Ask Modulator Designmentioning
confidence: 99%
“…Millimeter-wave NMOSFET models are established by extracting the parasitic components based on on-wafer measurements (Doan, 2005). The slow-wave transmission line (SWTL) (Cheung, 2003) shown in Fig. 15 is used for implementing the quarter-wavelength transmission lines and the networks between the circuit and the pads to reduce the size of the modulator.…”
Section: Millimeter-wave Cmos Ask Modulator Designmentioning
confidence: 99%
“…To minimize the line attenuation due to conductor loss and penetration of EM fields into the lossy substrate, the top metal layer (and typically the thickest metal layer) in the CMOS process is employed for the CPW structure. Also to further reduce the loss an array of floating narrow metal strips are placed under the transmission line as proposed by [14]. These floating metal strips isolate the CPW structure from the Si substrate, effectively removing the dielectric losses associated with the Si substrate.…”
Section: Transmission Linementioning
confidence: 99%
“…Such high losses translate into very small coverage of Smith chart (minimal impedance variation of the tuner). To reduce the loss and thus achieve better Smith chart coverage, an array of floating narrow metal strips is placed under the transmission line as proposed by [8]. These floating metal strips isolate the CPW structure from the Si substrate, effectively removing the dielectric losses associated with the Si substrate from the tuner structure.…”
Section: B Transmission Line Designmentioning
confidence: 99%