On-chip modulation instability

Abstract

We, theoretically study the emergence of Akhmediev Breather (AB) that develops via modulation instability in an Ultra-Silicon-Rich Nitride (USRN) waveguide. The nonlinear parameter of the USRN waveguide is 10 6 times as large as that in single mode fiber with exceptionally strong dispersion induced by the stopband in a cladding modulated Bragg grating (CMBG). This significantly reduces the length scale and input power required for light-matter interaction to take place. We show that at small input powers, the waveguide can trigger strong modulation instability close to the waveguide input. This allows a fully developed AB to form within the first 1-3 mm of a 6 mm waveguide. Realizing MI and AB on an integrated chip offers the opportunity to study a variety of nonlinear phenomena such as supercontinuum generation, Fermi-Pasta-Ulam (FPU) recurrence, and optical rogue waves in highly compact, CMOS-compatible form factors.