On-chip power supply noise measurement using Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC)

Stellari, Franco; Song, Peilin; Sylvestri, John; Miles, Darrell; Forlenza, Orazio; Forlenza, D.

doi:10.1109/test.2009.5355543

Cited by 6 publications

(3 citation statements)

References 36 publications

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“…Over the years, with the progressive shrinking of the technology node, a second emission component has become very important and led to the development of many new techniques and applications: LEOSLC [21][22][23][24][25][26][27] that takes place while the transistor has its gate to ground and the drain to the supply voltage (see Figure 1). This type of emission is strongly linked to the off-state leakage current from drain to source, thus showing strong dependence from all the major parameters that affect the off-state current, such as supply voltage, threshold voltage, systematic and random variability, temperature, etc.…”

Section: Emission Types and Applicationsmentioning

confidence: 99%

“…Since it has such a strong dependence from electrical and physical parameters, many new applications have been developed during the years. These include logic state mapping [21] where the state of a gate can be deduced from its emission signature, pattern debugging [21], latchup igmtlOn study [22], power supply noise measurement [23] and slew rate measurement [19], self heating estimation [24], systematic and random device variability mapping and characterization [25], security and counterfeit detection for ICs [26], etc. In the latest case, both switching emission and LEOSLC have been used to Paper 28.2 INTERNA TIONAL TEST CONFERENCE 2 extract functional blocks [27] and to reverse engineer the chip content.…”

Section: Emission Types and Applicationsmentioning

confidence: 99%

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Counterfeit IC detection using light emission

Song¹,

Stellari²,

Weger³

2014

2014 International Test Conference

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The proliferation of counterfeit Integrated Circuits (ICs) poses a big challenge for the electronics industry as today's supply chain of ICs becomes more complex and expensive. For this reason, it is imperative to mitigate these risks by developing counterfeit IC detection techniques, especially at the chip level. In this paper, a novel counterfeit IC detection method is proposed. It is based on the measurement of intrinsic light emission from CMOS ICs that is a strong function of the device threshold voltage (Vt) for a given technology. In contrast to currently available counterfeit IC detection techniques, the proposed method measures IC degradation after it has been used for a long time and does not require a reference IC to provide a baseline signature. A diff erential technique is used to detect diff erent levels of degradation inside the same chip in order to determine if it is counterfeit. Experimental results presented in this paper show that emission can be effectively used to detect degradation, thus making this technique a very effective wcry to detect counterfeit ICs.

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Section: Emission Types and Applicationsmentioning

confidence: 99%

Section: Emission Types and Applicationsmentioning

confidence: 99%

Counterfeit IC detection using light emission

Song¹,

Stellari²,

Weger³

2014

2014 International Test Conference

Self Cite

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show abstract

“…Use of light due to off-state leakage current (LEOSLC) [10][11][12][13][14][15] Apply to brand new applications, such as Logic state mapping [10], mode debugging [12], latch Ignition study [16,17], power supply noise [14,18,19] and Slew rate measurement [20], self-heating estimation [21], System and random device variability characterization [15], security and counterfeit detection for ICs [22], etc.…”

Section: Introductionmentioning

confidence: 99%

Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit

Lin¹,

Yong²

2021

AJECE

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Advanced technology nodes with small feature sizes and increased design complexity make it increasingly time-consuming to determine the root cause of yield loss. Several of the defects also occur inside a circuit making physical failure analysis (PFA) and electrical failure analysis (EFA) much more challenging. EFA has been instrumental in driving product yield and reliability for consumer products such as mobile phones and computer chips. It involves the use of state-of-the-art tools and techniques. One of the main changes EFA analyses is an enhancement of dynamic EFA in circuit failed in functional test. We propose a technique for advanced Electrical Failure Analysis (EFA) tool with a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits with enhanced sensitivity for discussing Time Resolved Emission (TRE). In order to understand the figures of advantage that a single-photon detector should have to enable the acquisition of time resolved emission waveforms for low voltage applications. We will provide that measurements down to a low 1 V supply voltage were made possible by a careful optimization of the detector front-end electronics. We also characterized the emission from devices with different threshold voltages in order to understand how the emission contributions depend on this parameter and how this affects the resulting waveform. we hope to be able to show soon even better results that should allow continued application of the non-invasive TRE and PICA technology towards future scaled nodes with smaller gates and lower supply voltages.

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Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit

Lin¹,

Yong²

2020

2020 China Semiconductor Technology International Conference (CSTIC)

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On-chip power supply noise measurement using Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC)

Cited by 6 publications

References 36 publications

Counterfeit IC detection using light emission

Counterfeit IC detection using light emission

Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit

Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit

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