On-Chip Ring Oscillator Based Scheme for TSV Delay Measurement

Pei, Songwei; Rabehb, Alrashdi Ahmed; Song, Junqiang

doi:10.1109/ats.2017.15

Cited by 5 publications

(4 citation statements)

References 20 publications

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“…Similarly, K p = (Wp1/Lp1) (Wp2/Lp2) , which represents the geometry ratio of transistors T p1 and T p2 . Meanwhile, in the formula (5), β n and β p , measured in A/V 2 , are given by formula (6) and formula (7).…”

Section: B Advantages Of Schmitt Triggermentioning

confidence: 99%

“…A refined design referred to as CAF-WAS (Charge-and-Float, Waitand-Sample) targeted pinhole defects was presented later to deal with process variations and to increase sensitivity [3]. [5] Ring oscillator Resistive open, leakage 40f F No Fault location and IS analysis K.Chakrabarty 2014-TCAD [6] Ring oscillator Resistive open, leakage 59f F No NULL Songwei Pei 2017-ATS [7] Ring oscillator Delay 40f F ,120f F No Three oscillators Yang Yu 2019-ITC-Asia [8] Ring oscillator Leakage 62f F No Extra RC circuit Xu Fang 2019-TVLSI [9] Switched capacitor Open, leakage 62f F No NULL Yang Yu 2020-TCAD [10] Switched capacitor Open, leakage, delay 0f F -200f F No RGC parameters measurement Montanes 2019-TVLSI [11] Duty Firstly, turn on the tri-state buffer to charge the TSV and then turn off the tri-state buffer to float the TSV. Secondly, sample the value at the output after waiting for a certain time, and then perform the pass/fail fault detection based on the binary result.…”

Section: Introductionmentioning

confidence: 99%

“…In view of this, Deutsch et al proposed to use multi-voltage method to test TSVs, which improved the test resolution and expanded the fault detection range to a certain extent [6]. S. Pei et al used three TSVs and their related logic gates to construct a TSV propagation delay measurement unit [7]. Firstly, the control signal is configured to create three different oscillators, and then the oscillation period of the three oscillators is measured to accurately calculate the propagation delay of the target TSV.…”

Section: Introductionmentioning

confidence: 99%

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A TSV Test Method for Resistive Open Fault and Leakage Fault Coexisting

Chang

2021

IEEE Access

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Large-size TSVs have larger parasitic capacitance, which leads to more resolution challenges. At the same time, due to the opposite fault effect of resistive open fault and leakage fault in the ring oscillator, the coexistence of two types of faults will cause serious test confusion. These problems significantly increase the difficulty in the TSV test. In this paper, a test method using Schmitt trigger as a TSV receiver is presented to enhance test resolution and reduce test confusion when two kinds of faults exist simultaneously. Schmitt trigger that is characterized by two threshold voltages is used to improve the test resolution. By reducing the supply voltage and checking whether the ring oscillator oscillates, we can identify whether there are two kinds of faults coexisting. HSPICE simulation results based on 45 nm CMOS technology demonstrate that the proposed method offers better test resolution in terms of large-size TSVs compared with the existing similar methods, and can distinguish the misdiagnosis when there are two kinds of faults existing simultaneously in a TSV. INDEX TERMS through silicon via, resistive open fault, leakage fault, Schmitt trigger, fault coexisting.

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Section: B Advantages Of Schmitt Triggermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A TSV Test Method for Resistive Open Fault and Leakage Fault Coexisting

Chang

2021

IEEE Access

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“…These TSV faults may induce the performance degradation, or even result in the function failure of 3D ICs. As a result, it is imperative to detect the TSV faults to assure the quality of 3D ICs [4,5,6,7,8,9,10]. The TSV faults are better to be detected prior to the bonding process.…”

Section: Introductionmentioning

confidence: 99%

An effective structure and flow for pre-bond TSV test

Pei

Song

2018

IEICE Electron. Express

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Pre-bond TSV test plays a vital role in improving the yield and reducing the cost of 3D ICs. In this paper, we proposed an effective test structure and flow for pre-bond TSV test. In the test structure, the resistorcapacitor parameter related to a specific TSV can be reflected by oscillations with high accuracy. By analyzing the period variations between two oscillations generated in successive test steps, the proposed test scheme enables quick detection of faulty TSVs. Experimental results have demonstrated the effectiveness of the proposed pre-bond TSV test scheme.

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