On-chip tensile testing of nanoscale silicon free-standing beams

Bhaskar, Umesh Kumar; Passi, Vikram; Houri, Samer; Escobedo-Cousin, Enrique; Olsen, SH; Pardoen, Thomas; Raskin, Jean‐Pierre

doi:10.1557/jmr.2011.340

Cited by 37 publications

(26 citation statements)

References 41 publications

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“…For the dimensions of our bridges (≥30 nm), we achieved comparable tensile strength, though our NWs were fabricated using a top down approach. This fracture strength (~7.6 GPa) is also equivalent to those obtained in top down fabricated Si NWs from defect free SOI using external actuators 25 .…”

Section: Discussionsupporting

confidence: 70%

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

et al. 2012

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strained si nanowires are among the most promising transistor structures for implementation in very large-scale integration due to of their superior electrostatic control and enhanced transport properties. Realizing even higher strain levels within such nanowires are thus one of the current challenges in microelectronics. Here we achieve 4.5% of elastic strain (7.6 GPa uniaxial tensile stress) in 30 nm wide si nanowires, which considerably exceeds the limit that can be obtained using siGe-based virtual substrates. our approach is based on strain accumulation mechanisms in suspended dumbbell-shaped bridges patterned on strained si-on-insulator, and is compatible with complementary metal oxide semiconductor fabrication. Potentially, this method can be applied to any tensile prestrained layer, provided the layer can be released from the substrate, enabling the fabrication of a variety of strained semiconductors with unique properties for applications in nanoelectronics, photonics and photovoltaics. This method also opens up opportunities for research on strained materials.

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Section: Discussionsupporting

confidence: 70%

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

et al. 2012

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“…In order to extract the Young's modulus as well as the fracture strain of the deposited polySi layer, on-chip tensile test structures have been manufactured. The principle and process of the preparation of samples are elab- orated in [34][35][36][37][38][39]. During the tensile test there are no longer interactions between the substrate and the film.…”

Section: Experimental Observationsmentioning

confidence: 99%

“…These simulation results (fracture strength and strain) are compared with corresponding experiments. In the experiments, the films have been tested freestanding by etching the underneath sacrificial layer [34][35][36][37][38][39] so that they undergo pure uniaxial tension conditions. A plane-stress condition is thus considered in the 2D-numerical simulations.…”

Section: Introductionmentioning

confidence: 99%

Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon

et al. 2014

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Micro-electro-mechanical systems (MEMS) made of polycrystalline silicon are widely used in several engineering fields. The fracture properties of polycrystalline silicon directly affect their reliability. The effect of the orientation of grains on the fracture behaviour of polycrystalline silicon is investigated out of the several factors. This is achieved, firstly, by identifying the statistical variation of the fracture strength and critical strain energy release rate, at the nanoscopic scale, over a thin freestanding polycrystalline silicon film having mesoscopic scale dimensions. The fracture stress and strain at the mesoscopic level are found to be closely matching with uniaxial tension experimental results. Secondly, the polycrystalline silicon film is considered at the continuum MEMS scale, and its fracture behaviour is studied by incorporating the nanoscopic scale effect of grain orientation. The entire modelling and simulation of the thin film is achieved by combining the discontinuous Galerkin method and extrinsic cohesive law describing the fracture process.

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“…The extracted Ê in the extensional mode is different from the one extracted in the bending mode [16]. Consequently, there are two types of experimental characterizations: those measuring Ê in the extensional mode, such as uniaxial tensile loading tests [41,42,9], and those in the bending mode such as resonance frequency based [6] tests or bending tests inside an atomic force microscopes [10,11]. Most of the research today focuses on the bending mode of Ê because it is more sensitive to surface stress and surface elasticity effects and because of its importance in sensing and actuating applications.…”

Section: Scale-dependencementioning

confidence: 99%