On Design of Wideband Compact-Size Ka/Q-Band High-Power Amplifiers

Alizadeh, Amirreza; Frounchi, Milad; Medi, Ali

doi:10.1109/tmtt.2016.2554578

Cited by 30 publications

(12 citation statements)

References 30 publications

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“…Special attention should be paid to whether the self-resonant frequency (f SR ) of the MIM capacitor, C s , falls within or below the operating band, as the resulting RF short circuit may trigger potential instability, leading the parallel RC network to lose its role in both stabilization and gain equalization. Furthermore, the inevitable electromagnetic (EM) coupling from the surrounding environment will shift the f SR of the C s to lower frequencies [2], for which we can split the C s into two identical square-shaped capacitors connected on both sides of the R s in parallel so that the parasitic inductance of the capacitor plates can be minimized. In addition, the symmetrical layout contributes to the signal transmission consistency and realizes the input balance of the transistor.…”

Section: Stabilitymentioning

confidence: 99%

“…According to the target level, the mainstream broadband schemes for PAs reported in the most recent literature can be roughly divided into three categories. In the architecture aspect, the major ones are distributed, balanced, and differential amplifiers that are capable of achieving more than a one-octave bandwidth via artificial transmission lines, 3 dB couplers, and balun transformers, respectively [1][2][3]. However, they generally have the evident drawback of bulky size, and some of them could suffer from significant losses or poor efficiency, restricting their use to certain scenarios.…”

Section: Introductionmentioning

confidence: 99%

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Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

et al. 2022

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A broadband GaN MMIC power amplifier (PA) with compact dimensions of 1.94 × 0.83 mm2 is presented for 5G millimeter-wave communication. To guarantee output capability at the operating band edges where serious performance degradation is likely to occur, the appropriate large-signal matching model and optimal impedance domain need to be carefully determined through load-pull analysis. Broadband matching networks (MNs) in the lowpass form are thereafter developed based on the Chebyshev filter synthesis theory. Using high-pass interstage MN in conjunction with parallel RC lossy circuits to compensate for the transistor’s negative gain roll-off slope ensures a flat frequency response. The input MN is designed as a band-pass filter due to the reactance extracted from the input side of the stabilized device exhibiting series LC resonance characteristics. Measured on-wafer pulsed results for the proposed three-stage PA demonstrate up to 30.9 dBm of output power, more than 28.6 dB of small-signal gain, and a peak power-added efficiency (PAE) of 35.6% at 27 GHz. Both uniform gain and saturated output power (Psat) are achieved across 24–30 GHz with fluctuations of less than 0.8 dB.

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Section: Stabilitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

et al. 2022

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“…However, the impact of the COVID-19 pandemic over recent years accelerated the digital transformation of industry, and with the development and promotion of advanced services such as virtual reality and autonomous driving, the potential of 5G is urgently in need of further progress to meet the increasing surge in high-speed traffic demand. The millimeter-wave (mmW) spectrum with abundant bandwidth resources has thereby become a research hotspot, especially in the Ka band [1][2][3][4], which constitutes the majority of 5G new radio frequency range 2 (NR FR2). The power amplifier (PA) designed in this study is intended to cover the overlapping bands n257, n258, and n261 allocated by 3GPP (TS 38.101-2) and corresponding to 24-30 GHz with a 22% fractional bandwidth (FBW).…”

Section: Introductionmentioning

confidence: 99%

Efficient GaN-on-Si Power Amplifier Design Using Analytical and Numerical Optimization Methods for 24–30 GHz 5G Applications

Peng

Zhang

2023

Electronics

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This paper presents the design procedure of an efficient compact monolithic microwave integrated circuit power amplifier (MMIC PA) in a 0.1 μm GaN-on-Si process for 5G millimeter-wave communication. Load/source-pull simulations were conducted to correctly create equivalent large-signal matching models for stabilized power cells and to determine the optimal impedance domain. The shorted stub with bypass capacitors minimizes the transistor’s output reactance, simplifying the matching objective to an approximate real impedance transformation (IT). With miniaturization as the implementation guide, explicit formulas and tabulated methods based on mathematical analysis were applied to synthesize the filtering matching networks (MNs) for the input and output stages. In addition, a CAD-dependent numerical optimization approach was used for the interstage MN that needs to cope with high IT ratio and complex loads. The continuous-wave (CW) characterization for the proposed two-stage PA demonstrated 19.8 ± 0.7 dB of small-signal gain, very flat output power (Pout) and power-added efficiency (PAE) at 4 dB gain compression of 32–32.4 dBm and 34–34.6%, respectively, over 24–30 GHz, with 37.1% of peak PAE at mid-frequency.

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“…In such context, broadband communication systems came into being and have been widely applied in modern commercial and military fields to date [1,2,3]. Besides, with the arrival of the 5G era, large bandwidth is also the essential ingredient to satisfy ever-growing mobile traffic volume demand [4,5]. Therefore, broadband PAs are attracting more attention and gradually become the focus of research.…”

Section: Introductionmentioning

confidence: 99%

“…Although the balanced amplifier is capable of reaching one-octave bandwidth, it requires bulky 3 dB couplers and large power consumption [5,9,10,11]. The reactive/resistive topology can provide a positive roll-of insertion loss slope for gain compensation, but its modest bandwidth and relatively poor VSWR are the main drawbacks [12,13].…”

Section: Introductionmentioning

confidence: 99%

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

Peng

Chen

Zhang

et al. 2021

IEICE Electron. Express

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This paper presents a K-band two-stage power amplifier (PA) with a compact circuit size of 1.8×0.87 mm 2 . To guarantee broadband high-gain output performance, the optimal impedance domain and power cell are determined through load/source-pull simulation and Kpoint method, respectively. Reactive/resistive matching networks are carefully employed to reduce the equivalent gate capacitance, improve stability and compensate for the device's negative gain roll-off slope. Meanwhile, combining with feedback technique adopted in driver stage, the entire operation bandwidth can be further extended. Under 12 V pulse voltage supply, 37.4% of peak power-added efficiency (PAE) at 26 GHz and 24±0.5 dB of small-signal gain, 30.3-31.6 dBm of saturated output power (P sat ) across 22-27 GHz are obtained as shown in the experimental results.

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On Design of Wideband Compact-Size Ka/Q-Band High-Power Amplifiers

Cited by 30 publications

References 30 publications

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

Efficient GaN-on-Si Power Amplifier Design Using Analytical and Numerical Optimization Methods for 24–30 GHz 5G Applications

Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

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