On dielectric breakdown in silicon-rich silicon nitride thin films

Habermehl, S.; Apodaca, Roger; Kaplar, Robert

doi:10.1063/1.3065477

Cited by 37 publications

(17 citation statements)

References 13 publications

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“…3 (b)). From the fits we have found a relative permittivity of approximately 7, which is consistent with the value for a SRSN layer [21]. At higher electric fields, the J-V curves depart from the exponential behavior and enter in a regime where the current is increasing with the square of the voltage, as can be seen in Fig.…”

Section: Electro-optical Characterizationsupporting

confidence: 68%

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Berencén¹,

Carreras²,

Jambois³

et al. 2011

Opt. Express

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Abstract:The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi-and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. Garrido, "Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitrideoxide gate stacks," Appl.

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Section: Electro-optical Characterizationsupporting

confidence: 68%

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Berencén¹,

Carreras²,

Jambois³

et al. 2011

Opt. Express

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“…From the slope of the best straight line fit through the data in Fig. 8(b) and (d), the conduction bulk trap depth can be calculated to be 1.02 and 1.18 eV, respectively for samples A and B, which are very close to values of some other reports [33,34,[38][39][40]. A Poole-Frenkel conduction bulk trap depth of 0.809 eV was reported in the as-grown stoichiometric SiN x by LPCVD at 780 8C [41].…”

Section: Methodssupporting

confidence: 85%

Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiN_x/n‐GaN MIS structures

Liu

Wang

et al. 2015

Physica Status Solidi (a)

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The first three authors contributed equally to this work.The low-pressure chemical vapor deposition (LPCVD)-SiN x layer is deposited prior to the ohmic alloying as the passivation layer and gate dielectric layer in GaN device fabrication. The effect of alloying temperature on the LPCVD-SiN x /GaN interface and LPCVD-SiN x dielectric film is evaluated by the capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The C-V analysis by frequency-dependent method and Terman method shows that the higher density of interface states occurs at the higher alloying temperature, while I-V analysis indicates that the higher alloying temperature can lead to smaller current density with slightly deeper traps for PooleFrenkel conduction. The hydrogen-related bonds may be the cause and affects the interfacial properties of LPCVD-SiN x / GaN as well as the electrical properties of LPCVD-SiN x film.

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“…66,67 Si-rich SRN films show low trap ionization potential with reduction in breakdown voltage determined by P-F field saturation condition. 68,69 For a-Si:H/a-SiN x , x = 1.4 nearly stoichiometric nitride, very large negative bias current than positive bias current is reported. This is due to the easier movement of holes into the bulk of the nitride, pointing asymmetry between electron and hole transport.…”

Section: Charge Transport Mechanism and I-v Characteristicsmentioning

confidence: 94%

SILICON QUANTUM DOTS GROWTH IN SiN_x DIELECTRIC: A REVIEW

Panchal

Mathew

et al. 2009

NANO

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This paper reviews research works carried out on silicon quantum dots (Si-QDs) embedded in the silicon nitride (SiN x ) dielectric matrix films with different fabrication techniques and different characteristics. The advantages of SiN x as a dielectric compared to silicon dioxide (SiO 2 ) for SiQDs from a device point of view are discussed. Various fabrication techniques along with different optimized deposition conditions are summarized. The typical results of structural characteristics of the films with Raman spectroscopy and Transmission Electron Microscopy (TEM) are discussed. The origin of photoluminescence (PL) from the films and the chemical compositional analysis such as X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy (SIMS) analysis of the films are also made available in brief. The charge conduction mechanism in the films with metal-insulator-semiconductor (MIS) structure, with their electrical characterization like capacitance-voltage (C-V ) and current-voltage (I-V ) measurements are presented.

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On dielectric breakdown in silicon-rich silicon nitride thin films

Cited by 37 publications

References 13 publications

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiN_x/n‐GaN MIS structures

SILICON QUANTUM DOTS GROWTH IN SiN_x DIELECTRIC: A REVIEW

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On dielectric breakdown in silicon-rich silicon nitride thin films

Cited by 37 publications

References 13 publications

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx/n‐GaN MIS structures

SILICON QUANTUM DOTS GROWTH IN SiNx DIELECTRIC: A REVIEW

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Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiN_x/n‐GaN MIS structures

SILICON QUANTUM DOTS GROWTH IN SiN_x DIELECTRIC: A REVIEW