Proceedings of the 50th Annual Design Automation Conference 2013
DOI: 10.1145/2463209.2488824
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On effective and efficient in-field TSV repair for stacked 3D ICs

Abstract: Three-dimensional (3D) integration based on through-silicon-vias (TSVs) is rapidly gaining traction for industry adoption. However, manufacturing processes for TSVs have been shown to introduce new failure mechanisms. In particular, thermo-mechanical stress and electromigration introduce reliability threats for TSVs, e.g., voids and interfacial cracks, which can lead to hard-to-predict timing errors on critical paths with TSVs, thereby resulting in accelerated chip failure in the field. Burn-in for screening l… Show more

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Cited by 37 publications
(30 citation statements)
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“…The X-axis and Y-axis show different TSV repair approaches, and threshold voltage variations normalized by the proposed method, respectively. The proposed method shows the least impact on the transistors by the TSV channels, and an NoC-type architecture [6] shows the highest stress on the transistors caused by adjacent TSVs. Table 1 shows various aspects of TSV repair methods.…”
Section:  mentioning
confidence: 99%
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“…The X-axis and Y-axis show different TSV repair approaches, and threshold voltage variations normalized by the proposed method, respectively. The proposed method shows the least impact on the transistors by the TSV channels, and an NoC-type architecture [6] shows the highest stress on the transistors caused by adjacent TSVs. Table 1 shows various aspects of TSV repair methods.…”
Section:  mentioning
confidence: 99%
“…If m spare TSVs are used, the spares can be re-routed up to m defective TSV channels. Figure 2(b) shows a TSV repair architecture based on a switch and routing path such as a Network-on-Chip (NoC) [6]. It allows for fully defective TSV channel replacement by spare TSVs using minimum routing paths.…”
Section: Related Workmentioning
confidence: 99%
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