On increasing of density of transistors in a hybrid cascaded multilevel inverter

Abstract

Purpose The purpose of this paper is to analytically model redistribution of dopant in a heterostructure during annealing of dopant and/or radiation defects (during the modeling, the authors consider two types of infusing of the dopant: dopant diffusion and ion implantation). The authors consider a heterostructure, which consists of a substrate and an epitaxial layer. After that the authors consider doping of several specific areas to manufacture heterodiodes and heterobipolar transistors framework hybrid cascaded multilevel inverter. Design/methodology/approach Based on the modeling, the authors introduce an approach to increase density of diodes and bipolar transistors framework hybrid cascaded multilevel inverter, which has been manufactured based on the heterostructure. The approach is based on using inhomogeneity of the heterostructure and optimization of annealing of dopant and/or radiation defects. Findings The approach gives us possibility to take into account nonlinearity of considered processes. Originality/value The authors introduce an analytical approach to model diffusion and ion types of doping with account concurrent changing of parameters in space and time.

On Optimization of Manufacturing of a Comparator in Track State to Increase Integration Rate of Elements

“…It should be noted that in the framework of the considered approach, one is required to optimize annealing of dopant and/or radiation defects. To do the optimization, the recently introduced criterion [24][25][26][27][28][29][30][31][32] was used. The optimization was based on approximation of the real distributions (see Figure 4, curves 2-4, an increase in the number of curves corresponds to an increase in annealing time) by step-wise function ψ (x,y,z) (see Figure 4, curve 1).…”

On increasing of integration rate of field-effect heterotransistors in the framework of RS-trigger

“…It should be noted, that framework the considered approach one shall optimize annealing of dopant and/or radiation defects. To do the optimization we used recently introduced criterion [26][27][28][29][30][31][32][33][34] . The optimization based on approximation real distribution by step-wise function  (x,y,z) (see Figs.…”

Untitled

“…3).It should be noted, that in the framework of the considered approach one shall optimize annealing of dopant and/or radiation defects. To do the optimization we used recently introduced criterion[26][27][28][29][30][31][32][33][34]. The optimization based on approximation real distribution by stepwise function  (x,y, z) (see Figs.…”