On-line ion implantation for quantification in secondary ion mass spectrometry:  determination of trace carbon in thin layers of silicon

Smith, Howard E.; Morrison, George H.

doi:10.1021/ac00290a052

Cited by 12 publications

(2 citation statements)

References 34 publications

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“…Despite continuing advances in the theoretical treatment of secondary ion 0003-2700/86/0358-1675$01.50/0 © 1986 American Chemical Society emission, models have failed to reliably predict ionization probabilities, and therefore elemental concentrations, from secondary ion intensities. As a result, quantitative analysis has been most accurately achieved by empirical calibration methods, where external as well as internal standards (3)(4)(5)(6) are used. It is in these studies that the variations in elemental sensitivities have been determined.…”

Section: Discussionmentioning

confidence: 99%

Ionization probability variations due to matrix in ion microscopic analysis of plastic-embedded and ashed biological specimens

Brenna¹,

Morrison²

1986

Anal. Chem.

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Section: Discussionmentioning

confidence: 99%

Ionization probability variations due to matrix in ion microscopic analysis of plastic-embedded and ashed biological specimens

Brenna¹,

Morrison²

1986

Anal. Chem.

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“…As suitable certified reference materials are rarely if ever available the most frequently used calibration samples are made by ion implantation on matrix matched substrates. Accurate in situ ion implantation procedures leading to a solid state standard additions method have also been introduced to facilitate the quantification process [2,3].…”

Section: Introductionmentioning

confidence: 99%

Quantification of antimony depth profiles in Sb-doped tin dioxide thin films

Lehto

Lappalainen

Viirola

et al. 1996

Analytical and Bioanalytical Chemistry

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Sb-doped SnO(2) thin films, deposited by atomic layer epitaxy (ALE) for gas sensor applications, have been characterized by secondary ion mass spectrometry (SIMS). Quantification of the depth profile data has been carried out by preparing a series of ion implanted standards. Average concentrations determined by SIMS have been compared with Sb/Sn ratios obtained by X-ray fluorescence (XRF) spectrometry and proton induced X-ray emission (PIXE) spectrometry and have been found to be in good agreement. However, a detection limit of 5x10(18) at cm(-3) could only be obtained because of mass interferences. SIMS data show that the ALE technique can be used to produce a controllable growth and doping of thin films.

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The status of reference data, reference materials and reference procedures in surface analysis

Grant

Williams

Fine

et al. 1988

Surface & Interface Analysis

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On-line ion implantation for quantification in secondary ion mass spectrometry: determination of trace carbon in thin layers of silicon

Cited by 12 publications

References 34 publications

Ionization probability variations due to matrix in ion microscopic analysis of plastic-embedded and ashed biological specimens

Ionization probability variations due to matrix in ion microscopic analysis of plastic-embedded and ashed biological specimens

Quantification of antimony depth profiles in Sb-doped tin dioxide thin films

The status of reference data, reference materials and reference procedures in surface analysis

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