On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma

Choi, Gilyoung; Efremov, Alexander; Lee, D. D.; Cho, Choong-Ho; Kwon, Kwang‐Ho

doi:10.1016/j.vacuum.2023.112484

Vacuum

2023

DOI: 10.1016/j.vacuum.2023.112484

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On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma

Gilyoung Choi

Alexander Efremov

D. D. Lee

et al.

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2024

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Cited by 5 publications

References 33 publications

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Comparative study of CF₄ + X + He (X = C₄F₈ or C₄H₂F₆) plasmas for high aspect ratio etching of SiO₂ with ACL mask

Choi,

Efremov,

Kwon

2024

Plasma Processes & Polymers

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This work compared C4F8 and C4H2F6 gases (as third components in CF4 + He gas mixture) for the high aspect ratio etching of SiO2 through the amorphous carbon layer (ACL) mask. The research scheme included the study of gas‐phase plasma characteristics, etching kinetics, and etching profiles. It was found that CF4 + C4F8 + He and CF4 + C4H2F6 + He gas mixtures are featured by quite close plasma parameters, the kinetics of electron‐impact processes, and ion bombardment intensities. At the same, the use of C4H2F6 provides a bit lower F atom density together with a bit higher polymerizing ability. All these factors cause lower absolute etching rates for both SiO2 and ACL but provide better SiO2/ACL/ACL selectivity and profile features.

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Comparative study of CF₄ + X + He (X = C₄F₈ or C₄H₂F₆) plasmas for high aspect ratio etching of SiO₂ with ACL mask

Choi,

Efremov,

Kwon

2024

Plasma Processes & Polymers

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Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

Li,

Yang,

et al. 2024

J. Mater. Chem. C

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Optical actinometry for number density measurements in low-pressure plasmas: Advantages, error sources, and method validation

Britun,

Mo,

Hsiao

et al. 2024

Journal of Applied Physics

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Number density of plasma-generated atoms or molecules is an important parameter for both fundamental research and applications. It can be measured in a straightforward manner, using vacuum-ultraviolet absorption spectroscopy, which is mainly possible in laboratory conditions as it may require bulky equipment, such as lasers. By contrast, optical actinometry is an alternative approach that only uses spontaneous emission from the plasma. This technique relies on the so-called corona excitation and uses emission line ratios between the gases with unknown and known concentrations (called actinometer in the last case). As a result of using line ratios, the additional density calibration is not required if the excitation cross sections are known. This study discusses Ar-based actinometry in low-pressure (roughly <1 kPa) plasma discharges with an emphasis on multiple line ratios. The work is particularly focused on the method’s applicability, the choice of Ar cross sections, and potential error sources. The influence of the additional excitation mechanisms is analyzed based on both experiments and modeling. The optical transitions for F, O, H, N, and P atoms along with expressions for their number density are presented, not requiring high optical resolution for measurements. For the sake of method validation, it is shown that in low-pressure radiofrequency discharges, a nearly excellent agreement between the actinometry data and the calibrated measurements can be achieved by careful selection of optical transitions.

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On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma

Cited by 5 publications

References 33 publications

Comparative study of CF₄ + X + He (X = C₄F₈ or C₄H₂F₆) plasmas for high aspect ratio etching of SiO₂ with ACL mask

Comparative study of CF₄ + X + He (X = C₄F₈ or C₄H₂F₆) plasmas for high aspect ratio etching of SiO₂ with ACL mask

Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

Optical actinometry for number density measurements in low-pressure plasmas: Advantages, error sources, and method validation

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On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma

Cited by 5 publications

References 33 publications

Comparative study of CF4 + X + He (X = C4F8 or C4H2F6) plasmas for high aspect ratio etching of SiO2 with ACL mask

Comparative study of CF4 + X + He (X = C4F8 or C4H2F6) plasmas for high aspect ratio etching of SiO2 with ACL mask

Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

Optical actinometry for number density measurements in low-pressure plasmas: Advantages, error sources, and method validation

Contact Info

Product

Resources

About

Comparative study of CF₄ + X + He (X = C₄F₈ or C₄H₂F₆) plasmas for high aspect ratio etching of SiO₂ with ACL mask

Comparative study of CF₄ + X + He (X = C₄F₈ or C₄H₂F₆) plasmas for high aspect ratio etching of SiO₂ with ACL mask