On Optimization of Manufacturing of an Amplifier to Increase Density of Bipolar Transistor Framework the Amplifier

Abstract

In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier due to decreasing of their dimensions. The considered approach based on doping of required areas of heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution of radiation defects (after implantation of ions of dopant) for optimization of the above annealing have been done by using recently introduced analytical approach. The approach gives a possibility to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces between layers of the heterostructure with account nonlinearity of these transports and variation in time of their parameters. KEYWORDS Bipolar heterotransistor; increasing of density of transistor; an amplifier circuit

On Approach to Decrease Dimensions of Field-Effect Transistors Framework Element of SRAM With Increasing Their Dimensions

“…3a for diffusion type of doping and 3b for ion type of doping). We determine the compromise value of annealing time framework recently introduced criterion [15][16][17][18][19][20][21][22]. To use the criterion we approximate distribution of concentration of dopant by idealized step-wise function ψ (x,y,z).…”

An approach to increase the integration rate of planar drift heterobipolar transistors

“…(1) complicating the approximation of dopant diffusion coefficient Eq. (3) (see, for example, [21]). Let us determine the spatio-temporal distributions of concentrations point radiation defects by solving the following system of equations [27,28] and boundary conditions ∂ρ x; y; z; t ð Þ ∂x Here ρ¼I,V; I(x,y,z,t) is the spatio-temporal distribution of concentration of interstitials; D ρ (x,y,z,T) are the diffusion coefficients of vacancies and interstitials; terms V 2 (x,y,z,t) and I 2 (x,y,z,t) correspond to generation of divacancies and di-interstitials, respectively; k I,V (x,y,z,T), k I,I (x,y,z,T) and k V,V (x, y,z,T) are the parameters of recombination of point radiation defects and generation of their complexes, respectively.…”

“…α(x,y,z,T)¼λ(x,y,z,T)/c(T) is the heat diffusivity. Spatio-temporal distribution of concentration of dopant was calculated using the method of averaging of function corrections [21,30] with decreased quantity of iteration steps [31]. In this approach we used solutions of the above differential equations without any nonlinearity and with averaged values of diffusion coefficients and thermal diffusivity D 0L , D 0I , D 0V , D 0ΦI , D 0ΦV , α 0 .…”

“…The second-order approximations and approximations with higher orders of concentration of dopant, concentrations of radiation defects and temperature have been calculated framework standard iteration procedure of method of averaging of function corrections [21,30,31]. Framework the approach to calculate n-th-order approximations of the above concentrations and temperature we replace the required functions C(x,y,z,t), I(x,y,z,t), V(x,y,z,t), Φ I (x,y,z,t), Φ V (x,y,z,t) and T(x,y,z,t) in the right sides of Eqs.…”

“…The processing leads to change in distribution of dopants [20]. This change leads to decrease in elements integrated circuits [21]. One way to increase performance of elements of integrated circuits is determination of materials with higher values of charge carriers mobility [1][2][3][4][5][6][7][8][9][10][11][12][13][14][22][23][24][25].…”