On permittivity of a stacking nano-faulty film

Abstract

Theoretical framework is introduced to explain high effective permittivity of a stacking nano-faulty semiconductor film. Effective permittivity dependence on the temperature is shown to be a steplike function with levels determined by the sum parts of constituent layers with relatively high resistivity in film thickness within given temperature region because they are short-circuited by the relatively low resistive layers. These levels at sufficiently low and sufficiently high temperatures coincide with material's true permittivity while at intermediate temperatures may significantly exceed its value. In chemically pure or homogeneously doped coarse-crystalline semiconducting films, the layers distinguished by resistivity can be formed due to piezoresistance effect induced by the local elastic stresses which are related with stacking nano-faults existing in film's plane.

Adsorption of nucleobase pairs on hexagonal boron nitride sheet: hydrogen bonding versus stacking

“…These results are in accordance with previous theoretical results. 60,61 Although the DFT calculations usually underestimate the band gap with respect to the experimental results, these calculations are still useful for the comparison of results in this work. A vacuum with a height of 20 Å was placed above the h-BN surface to minimize the influence between adjacent h-BN layers.…”