On Quenching Induced Deep Levels in Czochralski p-Silicon

Schmalz, K.; Kirscht, F.G.; Reichel, Jakob

doi:10.1002/pssa.2211110249

Phys. Stat. Sol. (a)

1989

DOI: 10.1002/pssa.2211110249

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On Quenching Induced Deep Levels in Czochralski p-Silicon

K. Schmalz¹,

F.G. Kirscht²,

Jakob Reichel³

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1990

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Intrinsic gettering of Cr impurities in p-type Cz silicon

Adegboyega

Poggi²

1990

phys. stat. sol. (a)

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The gettering of chromium impurities by means of high temperature oxygen precipitates is studied by means of resistivity, lifetime, and infrared absorption spectroscopy measurements. The results show that the density of interstitial oxygen, following an oxygen precipitation step, is rather low, and the presence of this interstitial oxygen is closely connected with the formation of the so‐called new donor defect. Most of the high temperature (T = 1000°C) oxygen precipitates seem to appear in the form of SiO2 and there is a strong evidence of a redissolution of the oxygen precipitates due to Cr diffusion. The presence of this high temperature oxygen precipitate shows a high efficiency in the gettering of Cr impurities.

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Intrinsic gettering of Cr impurities in p-type Cz silicon

Adegboyega

Poggi²

1990

phys. stat. sol. (a)

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show abstract

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On Quenching Induced Deep Levels in Czochralski p-Silicon

Cited by 1 publication

References 6 publications

Intrinsic gettering of Cr impurities in p-type Cz silicon

Intrinsic gettering of Cr impurities in p-type Cz silicon

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