On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

Vimalkumar, T.V.; Poornima, N.; Jinesh, K. B.; Kartha, C. Sudha; Vijayakumar, K. P.

doi:10.1016/j.apsusc.2011.03.118

Cited by 55 publications

(14 citation statements)

References 40 publications

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“…Therefore, this change of orientation is certainly as the effect of N and Cu doping in ZnO lattice. Similar result was observed for indium doped ZnO thin films [19].…”

Section: Resultssupporting

confidence: 85%

Effect of N and Cu Doping on Structure, Surface Morphology and Photoluminescence Properties of ZnO Thin Films

Liton¹,

Khan

Rahman³

et al. 2015

J. Sci. Res.

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Thin films of ZnO, ZnO:Cu, ZnO:N and ZnO:(Cu,N) have been deposited on glass substrate at temperature 350ºC by low cost spray pyrolysis (SP) technique at an ambient atmosphere. The X-ray diffraction (XRD) study revealed that the films are of mono-phasic polycrystalline in nature having wurtzite ZnO crystal structure. The preferential orientation of un-doped ZnO films is in the (002) plane which changes to (101) for N and Cu monodoped and (Cu, N) co-doped ZnO films. Surface morphology studied by scanning electron microscopy (SEM) clearly shows the formation of rock shaped nanostructures and hexagonal crystalline grains. The atomic force microscopy (AFM) study revealed the formation of crystalline grains perpendicular to the surface and reduction of surface roughness with doping. The photoluminescence (PL) spectra of the un-doped and doped ZnO samples show well defined transitions of the near band edge (NBE) and deep level (DLE) emissions emerged from different defect states present in the films.

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“…Therefore, this change of orientation is certainly as the effect of N and Cu doping in ZnO lattice. Similar result was observed for indium doped ZnO thin films [19].…”

Section: Resultssupporting

confidence: 85%

Effect of N and Cu Doping on Structure, Surface Morphology and Photoluminescence Properties of ZnO Thin Films

Liton¹,

Khan

Rahman³

et al. 2015

J. Sci. Res.

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“…It is important to analysis the strain, because it affect significantly the structural properties of AZO thin films. The mean strain for ZnO thin films with wurtzite structure can be obtained by the following formula [34]:…”

Section: Methodsmentioning

confidence: 99%

Influence of doping behavior of Al on nanostructure, morphology and optoelectronic properties of Al Doped ZnO thin film grown on FTO substrate

Shirazi

Dariani

Toroghinejad

2016

J Mater Sci: Mater Electron

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Al doped ZnO nanostructures deposited on FTO glass substrate by spray pyrolysis method with different Al doping levels (0-5 wt%). The structural, morphological, optical and electrical properties of fabricated samples were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), four point probe, and UV-Vis spectroscopy. The results obtained from XRD analysis indicated that the growth preferred orientation of the ZnO thin films strongly depend on Al doping value. Also the crystalline plane distance and grain size decreased while free electron density and energy band gap enhanced as the Al doping value increased. PL analysis revealed the Near Band emission in PL spectra shifts to shorter wavelengths and Fermi surface shifts to conduction band with increasing the Al content. Electrical measurements illustrated that the resistivity reduces with doping Al into ZnO and reaches to minimum value for 3 % Al doped sample. Also the surface morphology and surface roughness of samples deposited by various Al doping values studied by FESEM and AFM analyzes.

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“…ZnO films for gas sensing application were selected after optimizing the various parameters like spray rate, molarity, oxygen stoichiometry and thickness. [46][47][48] Prior to gas sensing measurements, the films were annealed at an approximate temperature 600 • C overnight (Actual temperature at the sample was within a range of 5% of this set temperature.) to remove any possible organic residue remained from the precursor solution and also to improve the crystallinity and to sinter the layer.…”

Section: Film Preparationmentioning

confidence: 99%

Gas sensing application of nanocrystalline zinc oxide thin films prepared by spray pyrolysis

2015

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Nanocrystalline oxygen-deficient ZnO thinfilm sensors were prepared by spray pyrolysis technique using zinc acetate dissolved in propanol and water as precursor. Response of the sensor to target gases NO 2 and H 2 S is studied. At optimum temperature of 200 • C, the sensors have a response of 3.32 to 7 ppm NO 2 and 1.4 to 18 ppm of H 2 S gas. The analytical characterizations of the prepared sensors were performed using X-ray diffraction measurement, scanning electron microscopy, energy-dispersive X-ray spectroscopy and Raman spectroscopy. Dynamic response of sensors to different concentrations of NO 2 and H 2 S gas was tested at optimum temperature. Experimental data revealed the sensors to be more selective to NO 2 gas with satisfactory response and recovery time.

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On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

Cited by 55 publications

References 40 publications

Effect of N and Cu Doping on Structure, Surface Morphology and Photoluminescence Properties of ZnO Thin Films

Effect of N and Cu Doping on Structure, Surface Morphology and Photoluminescence Properties of ZnO Thin Films

Influence of doping behavior of Al on nanostructure, morphology and optoelectronic properties of Al Doped ZnO thin film grown on FTO substrate

Gas sensing application of nanocrystalline zinc oxide thin films prepared by spray pyrolysis

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