On-site tetrafluoroethylene gas generation from moderate-pressure pure tetrafluoromethane plasma reactor

Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4

“…Recently, it was proposed the on-site synthesized process of C 2 F 4 gas from CF 4 plasma at a moderate pressure (40-200 Torr). 12) In this process, CF 4 decomposes to CF 2 radicals by the collision of an electron, and CF 2 radicals recombines to C 2 F 4 through a three-body collision reaction. The gas supply system based on this process is usable for a mass production, because the continuous and direct supply of synthesized C 2 F 4 into the etching reactor can be realized without a high pressure gas cylinder.…”

“…The carbon-pipe was used in order to produce C 2 F 4 efficiently, since it consumes the surplus F in the plasma and suppresses the reverse reaction from C 2 F 4 to CF 4 . 12) While CF 4 (35-100 sccm) was introduced into the C 2 F 4 generator, on-site synthesized C 2 F 4 formed in CF 4 -CCP was exhausted through the carbon-pipe electrode and introduced directly into the etching reactor. The total gas pressure in the C 2 F 4 generator was controlled at 100 Torr.…”