On Some Dielectric Properties of Disordered Semiconductors

Бонч-Бруевич, В. Л.

doi:10.1007/978-3-322-94774-1_183

Cited by 52 publications

(93 citation statements)

References 2 publications

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“…16, p. 659). The surface density of the thermionic current J nc flowing through the contact at the site of the formation of the dislocation (at its end) is determined by solving the continuity equation for electrons.…”

Section: Theoretical Modelmentioning

confidence: 99%

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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The temperature dependence of contact resistivity q c in lapped silicon specimens with donor concentrations of 5 Â 10 16 , 3 Â 10 17 , and 8 Â 10 17 cm À3 was studied experimentally. We found that, after decreasing part of the q c (T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results. V C 2012 American Institute of Physics. [http://dx

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Section: Theoretical Modelmentioning

confidence: 99%

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Sachenko

Belyaev

Болтовец

et al. 2012

Journal of Applied Physics

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“…In the latter case to describe the main features of a large number of photocatalytic reactions the consideration of electron-hole pairs generation via band-to-band transitions, reverse recombination of photo carriers and electron transfer through solid-liquid boundary only are often quite enough (see, for example [2]). It is commonly accepted to tell the difference between the so called photoelectric active and photoelectric inactive light absorption depending on whether or not the free charge carriers appear in solids under illumination (see, for example [3]). On the other hand the absorption of light quanta can be related with regular crystal sites (fundamental or intrinsic absorption) and with crystal imperfections, i.e., with intrinsic and extrinsic lattice defects (see, for example [4][5][6]).…”

Section: Photoexcitation Of Wide Band Gap Solids Intrinsic and Extrimentioning

confidence: 99%

“…Foreign atoms, ions and their aggregations in the bulk of host crystal and at its surface constitute the variety of extrinsic defects. The simplified representation of possible types of electronic excitations [3] in solids induced by light absorption of different kinds is shown ( Figure 1). The latter go as following:…”

Section: Photoexcitation Of Wide Band Gap Solids Intrinsic and Extrimentioning

confidence: 99%

“…(3)) typically is very low in wide band gap solids. Actually, in a case of nonradiative recombination the relatively large energy of electron-hole pair (E g ) must be changed for the energy of a large number of phonons in manyparticle process, while in a case of radiative (luminescent) recombination the momentum conservation law demands of practically zero sum momentum for recombining electron-hole pair [3]. Thus the alternative recombination of photocarriers via subsequent trapping of electrons (e) and holes (h) and vice versa by so called recombination centers R c (not shown, Figure 3) is considered as preferable pathway for photo carriers decay under moderate irradiation in imperfect wide band gap solids…”

Section: Photoexcitation a Case Of Photoelectric Active Absorptionmentioning

confidence: 99%

“…Typically the amount (concentration) of R c centers in crystals and their ability for the effective trapping of both electrons and holes determine the lifetime of free photocarriers, and so their concentration at a given density of carriers photo generation [3]. The formation of F and V centers (2, Figure 3) in the bulk of crystal particle is similar to the first stage of recombination (4).…”

Section: Photoexcitation a Case Of Photoelectric Active Absorptionmentioning

confidence: 99%

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Photophysical Processes Related to Photoadsorption and Photocatalysis on Wide Band Gap Solids: A Review

Ryabchuk

2005

ChemInform

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Abstract. During the last two decades, various pathways describing photoexcitation of small molecules' surface reactions at the wide band gap metal oxides and halides (E g > 3 eV) have been recognized. Photogeneration of excitons and free charge carriers may occur in bands of: i) fundamental absorption; ii) extrinsic and intrinsic defect absorption, including those related to surface states; and iii) in UV-induced color centers. Considerable red shifts relative to the fundamental absorption threshold of wide band gap solids have been observed for the spectral limits of surface photoreactions induced in extrinsic absorption bands. This allows thinking about the wide band gap solids as a potential competitors for the relatively narrow band gap photocatalysts. This review discusses the concept of surface photoadsorption (photocatalytic) center while differentiating active and inactive states of the center. Electronically excited defect, surface self-trapped or bound exciton, and the surface defect with trapped photo carrier are considered as the active states of photoadsorption (photocatalytic) centers of different types. The decay pathway of active state determines the lifetime of a photocatalytic center, and in this connection the Langmuir-Hinshelwood kinetic approach is discussed.

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Fast-Neutron Radiation Damages in Heavily Doped p-Silicon

Litvinov

Ukhin

1985

phys. stat. sol. (a)

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A model of damage induced by fast neutrons (and other high‐energy particles) in heavily doped semiconductor materials is suggested on the basis of present‐day ideas. It is shown that the nature of damage is determined by the ratio of impurity concentration to defect density in the displacement cascade. If this ratio is greater than unity, an impurity—defect region develops rather than a divacancy one. If the ratio is very high, fast neutrons induce a set of simple defects. Some features of changes in electrical properties of heavily doped p‐silicon films on sapphire irradiated with reactor neutrons are explained in terms of the model.

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On Some Dielectric Properties of Disordered Semiconductors

Cited by 52 publications

References 2 publications

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si

Photophysical Processes Related to Photoadsorption and Photocatalysis on Wide Band Gap Solids: A Review

Fast-Neutron Radiation Damages in Heavily Doped p-Silicon

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