On Some Overviews of Heterojunction Bipolar Transistor Technology: A Study

Abstract

Heterojunction Bipolar Transistor (HBT)[1]technology has become a serious player in wireless communication, power electronic equipment, mixer, and frequency synthesizer applications. HBTs extend the benefits of semiconductor bipolar transistors to considerably higher frequencies. Since the middle -1980s, HBT technology development has targeted on reducing value and rising dependability that successively, led to numerous commercial products, such as prescalers, gate arrays, digital-to-analog converters, mux/demux chip sets, logarithmic amplifiers, RF chip sets for CDMA wireless communication systems, and power amplifiers for cellular communications. They have become a natural alternative for terribly high frequency military applications requiring a high current drive, high transconductance, high voltage handling capability, low noise oscillator, and uniform threshold voltage. Emerging HBT technologies enable the combination of an outsized amount of high performance RF circuits and high speed digital circuits on one chip. In these research paper efforts has been given to obtain better results with a novel heterojunction.