2007
DOI: 10.1063/1.2805198
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On spectral and thermal behaviors of AlGaInP light-emitting diodes under pulse-width modulation

Abstract: P5Publication 5 P. Manninen and P. Orreveteläinen, "On spectral and thermal behaviors of AlGaInP light-emitting diodes under pulse-width modulation," Appl.

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Cited by 47 publications
(33 citation statements)
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“…When designing high-power and large-area structures for dimming the LEDs operated in a pulse-width modulation mode, 16 these effects need to be fully understood, characterized, and taken into account. In particular, the p + -cladding layer could be nominally doped and the metal contact needs to cover the entire surface of the mesa.…”
Section: Discussionmentioning
confidence: 99%
“…When designing high-power and large-area structures for dimming the LEDs operated in a pulse-width modulation mode, 16 these effects need to be fully understood, characterized, and taken into account. In particular, the p + -cladding layer could be nominally doped and the metal contact needs to cover the entire surface of the mesa.…”
Section: Discussionmentioning
confidence: 99%
“…The wavelength shift is caused by the residual increase in temperature associated with the increase in dissipated power with increasing bias current [13,14].…”
Section: Spectral Distributionmentioning
confidence: 99%
“…Under current injection, only a portion of the electrical power is converted into optical power while the rest is dissipated in the form of heat accumulating in the p-n junction before propagating to the entire LED chip [16][17][18][19][20]. As the junction temperature rises during operation, the optical properties of the LED electroluminescence result in red-shifting of the peak wavelength, decreasing optical intensity, and broadening spectrum [17,21].…”
Section: Introductionmentioning
confidence: 98%