ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

Acurio, Eliana; Trojman, Lionel; Jaeger, B. De; Bakeroot, Benoit; Decoutere, Stefaan

doi:10.1109/irps46558.2021.9405163

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ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

Cited by 3 publications

References 19 publications

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

Design of a Gate Driver Based-on E-mode p-GaN HEMTs Handling 650V/10A GaN Power Device

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