In recent years, the hybrid silicon-molecular electronics
technology
has been gaining significant attention for applications in sensors,
photovoltaics, power generation, and molecular electronics devices.
However, Si–H surfaces, which are the platforms on which these
devices are formed, are prone to oxidation, compromising the mechanical
and electronic stability of the devices. Here, we show that when hydrogen
is replaced by deuterium, the Si–D surface becomes significantly
more resistant to oxidation when either positive or negative voltages
are applied to the Si surface. Si–D surfaces are more resistant
to oxidation, and their current–voltage characteristics are
more stable than those measured on Si–H surfaces. At positive
voltages, the Si–D stability appears to be related to the flat
band potential of Si–D being more positive compared to Si–H
surfaces, making Si–D surfaces less attractive to oxidizing
OH– ions. The limited oxidation of Si–D surfaces
at negative potentials is interpreted by the frequencies of the Si–D
bending modes being coupled to that of the bulk Si surface phonon
modes, which would make the duration of the Si–D excited vibrational
state significantly less than that of Si–H. The strong surface
isotope effect has implications in the design of silicon-based sensing,
molecular electronics, and power-generation devices and the interpretation
of charge transfer across them.