On temperature and flux dependence of isotropic silicon etching in inductively coupled SF<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si4.svg" display="inline" id="d1e83"><mml:msub><mml:mrow/><mml:mrow><mml:mn>6</mml:mn></mml:mrow></mml:msub></mml:math> plasma

Rudenko, M.; Kuzmenko, V.; Miakonkikh, Andrey V.; Лукичев, В. Ф.

doi:10.1016/j.vacuum.2022.111326

Cited by 2 publications

(1 citation statement)

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“…As the proportion of SF 6 in the mixture increases, the proportion of atomic oxygen in the plasma decreases, and the proportion of fluorine changes slightly. It was shown that the surface oxidation of silicon in plasma is mainly controlled by the concentration of atomic oxygen [ 61 ], and the etching rate of silicon and silicon oxide (in this case as a passivation layer) is determined by the concentration of atomic fluorine over a wide range of concentrations [ 62 ]. In addition, other factors, such as temperature and average ion energy, can shift the passivation-etching balance.…”

Section: Discussionmentioning

confidence: 99%

Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF6/O2 Gas Mixture

Miakonkikh,

Kuzmenko

2024

Nanomaterials

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This article discusses a method for forming black silicon using plasma etching at a sample temperature range from −20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrelation function of surface features, and reflectivity were studied depending on the process parameters—the composition of the plasma mixture, temperature and other discharge parameters (radical concentrations). The relationship between these parameters and the concentrations of oxygen and fluorine radicals in plasma is shown. A novel approach has been studied to reduce the reflectance using conformal bilayer dielectric coatings deposited by atomic layer deposition. The reflectivity of the resulting black silicon was studied in a wide spectral range from 400 to 900 nm. As a result of the research, technologies for creating black silicon on silicon wafers with a diameter of 200 mm have been proposed, and the structure formation process takes no more than 5 min. The resulting structures are an example of the self-formation of nanostructures due to anisotropic etching in a gas discharge plasma. This material has high mechanical, chemical and thermal stability and can be used as an antireflective coating, in structures requiring a developed surface—photovoltaics, supercapacitors, catalysts, and antibacterial surfaces.

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Section: Discussionmentioning

confidence: 99%