On the 60th anniversary of the Lifshitz-Kosevich theory

Peschanskii, V. G.; Kolesnichenko, Yu. A.

doi:10.1063/1.4871744

Cited by 3 publications

(3 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…19, the shape of the MR curve is drastically different from the results discussed previously (Figs 17 and 18). Shubnikov-De Haas (SdH) oscillations analysis showed that the amplitude of the SdH oscillations increases with nitrogen concentration and linearly decreases with increasing temperature, persisting up to a temperature of 150 K. This dependence, at odds with the well-established Lifshitz-Kosevich theory [124,125], was tentatively explained by a dopants-induced bandgap which renormalizes the cyclotron mass and by a temperature dependence of the scattering time.…”

Section: Magnetoresistance Experiments On Chemically-doped Graphenementioning

confidence: 98%

Electronic properties of chemically doped graphene

Joucken

Henrard

Lagoute

2019

Phys. Rev. Materials

View full text Add to dashboard Cite

Chemical doping of graphene is the most robust way of modifying graphene's electronic properties. We review here the results obtained so far on the electronic structure and transport properties of chemically-doped graphene, focusing on the results obtained with scanning tunneling micropscopy/spectroscopy (STM/S), angle-resolved photoemission spectroscopy (ARPES), and magnetoresistance (MR) measurements. The majority of the results reported have been obtained on nitrogendoped samples, but boron-doped graphene has also been well documented. Besides the appearance of the dopant on STM topographic images, the main questions that have been addressed are the atomic configurations of the doping and their doping efficiency (number of electron/hole brought to the graphene lattice). Both can be addressed by a local probe such as STM/S. The doping efficiency has also been complementary studied via direct visualization of the band structure with ARPES. The effect of the dopants on the electronic transport properties and in particular their influence on the scattering mechanisms is also presented. Finally, avenues for future research efforts are suggested.

show abstract

Section: Magnetoresistance Experiments On Chemically-doped Graphenementioning

confidence: 98%

Electronic properties of chemically doped graphene

Joucken

Henrard

Lagoute

2019

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…This is known as the De Haas-Van Alphen effect (dHvA) oscillations that originate from the orbital motion of itinerant electron at high magnetic fields [ 41 ]. We analyze the dHvA oscillations by fitting the oscillatory magnetization to the Lifshitz-Kosevich (LK) formula [ 42 ], . R is related to the carrier scattering rate, Zeeman effect, and Landau level broadening [ 43 ].…”

Section: Resultsmentioning

confidence: 99%

The Magnetic Susceptibility Bifurcation in the Ni-Doped Sb2Te3 Topological Insulator with Antiferromagnetic Order Accompanied by Weak Ferromagnetic Alignment

et al. 2021

View full text Add to dashboard Cite

The magnetic susceptibility reveals a discontinuity at Néel temperature and a hysteresis loop with low coercive field was observed below Néel temperature. The magnetic susceptibility of zero field cool and field cool processes coincide at a temperature above the discontinuity, and they split at temperature blow the discontinuity. The magnetic susceptibility splitting is larger at lower external magnetic fields. No more magnetic susceptibility splitting was observed at a magnetic field above 7000 Oe which is consistent with the magnetic anisotropy energy. Our study supports that these magnetic susceptibility characteristics originate from an antiferromagnetic order accompanied by weak ferromagnetism.

show abstract

“…At values of the magnetic fields where the effect of the periodic atomic lattice sites dominates, the effect of the magnetic fields can be described simply in terms of the dynamics of the Bloch energy bands [12,13] . For example, for finite magnetic fields, this is manifested in de Haas-van Alphen effects [14,15] due to Landau orbits at the Fermi surface, and magnetic breakdown between orbits in complicated Fermi surfaces in metals [16,17]. For smaller magnetic fields, the Bloch-band dynamics is manifested in such phenomena as paramagnetic and diamagnetic susceptibility.…”

Section: Low Finite Fieldsmentioning

confidence: 99%

On Fractional Quantum Hall Effect (FQHE): A Chern-Simons and nonequilibrium quantum transport Weyl transform approach

Buot¹,

Maglasang²,

Elnar³

et al. 2021

Preprint

View full text Add to dashboard Cite

We give a simple macroscopic phase-space explanation of fractional quantum Hall effect (FQHE), in a fashion reminiscent of the Landau-Ginsburg macroscopic symmetry breaking analyses. This is in contrast to the more complicated microscopic variational wavefunction approaches. Here, we employ a novel approach based on nonequilibrium quantum transport in the lattice Weyl transform formalism, coupled with the Maxwell Chern-Simons gauge theory for defining fractional filling of Landau levels. We show that flux attachment concept is inherent in fully occupied and as well as in partially occupied Landau levels. We derived the scaling k-factor in Chern-Simons gauge theory, as corresponding to the scaling of the magnetic fields or magnetic flux in FQHE. This is shown to be crucial in our simple explanation of FQHE as a topological invariant in phase space. The integer k this must be a prime number, whereas for fractions the numerator of k must also be a prime number. The assumption in the literature that the denominator of v = 1 k is given by the expression, (2n + 1), is wrong. Furthermore, although even denominators for v are speculated in the literature, this idea is definitely not allowed in our analysis.

show abstract

On the 60th anniversary of the Lifshitz-Kosevich theory

Abstract: The Landau band effects in the quantum magnetic oscillations and the deviations from the quasiclassical Lifshitz-Kosevich theory in quasi-two-dimensional conductors Low Temp. Phys. 37, 964 (2011);

Cited by 3 publications

References 14 publications

Electronic properties of chemically doped graphene

Electronic properties of chemically doped graphene

The Magnetic Susceptibility Bifurcation in the Ni-Doped Sb2Te3 Topological Insulator with Antiferromagnetic Order Accompanied by Weak Ferromagnetic Alignment

On Fractional Quantum Hall Effect (FQHE): A Chern-Simons and nonequilibrium quantum transport Weyl transform approach

Contact Info

Product

Resources

About