On the Accuracy Obtained When Using Variational Techniques for Asymetrically Loaded Waveguides (Correspondence)

Gallium arsenide (GaAs) and indium antimonide (InSb) are two candidate semiconductor materials for supporting nonreciprocal behavior at millimeter wave and sub-millimeter wave frequencies. Each material is characterized as a function of bias field/frequency and different operating regions are identified either side of the extraordinary wave resonance. An eigenvalue finite element formulation is developed to calculate the complex propagation constant for general gyroelectric waveguide structures. The solver is used to investigate nonreciprocal phase shift and attenuation in a transversely magnetized, semiconductor slab loaded waveguide in the various operating regions. Several potential regions of isolation and differential phase shift have been identified for exploitation in the millimeter wave range for GaAs and in the sub-millimeter wave range for InSb.

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Finite Element Analysis of Millimeter and Sub-Millimeter Wave Gyroelectric Waveguide Components

Tio

Gibson

Dillon

et al. 2006

Electromagnetics

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Analytic solution to field distribution in two-dimensional inhomogeneous waveguides

Gric

Eldlio

Čada

et al. 2015

Journal of Electromagnetic Waves and Applications

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Analysis of closed arbitrary dielectric waveguides using a modified Rayleigh-Ritz technique

Young

1991

IEEE Trans. Microwave Theory Techn.

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On the Accuracy Obtained When Using Variational Techniques for Asymetrically Loaded Waveguides (Correspondence)

Cited by 8 publications

References 2 publications

Finite Element Analysis of Millimeter and Sub-Millimeter Wave Gyroelectric Waveguide Components

Finite Element Analysis of Millimeter and Sub-Millimeter Wave Gyroelectric Waveguide Components

Analytic solution to field distribution in two-dimensional inhomogeneous waveguides

Analysis of closed arbitrary dielectric waveguides using a modified Rayleigh-Ritz technique

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